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DRC5614T0L

P1-P3P4-P5
Product Standards
Transistors with Built-in Resistor
DRC5614T0L
Absolute Maximum Ratings Ta = 25 C
Page
V
Storage temperature Tstg -55 to +150 °C
°C
Total power dissipation PT 150 mW
Junction temperature Tj 150
IC 600 mA
Collector-emitter voltage (Base open) VCEO 20 V
VEBOEmitter-base voltage (Collector open) 5
Collector-base voltage (Emitter open) VCBO 30 V
Internal Connection
Resistance
value
R1 10
k
Collector current
1of4
Unit: mm
SC-85
Collector
VT
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
Packaging
SMini3-F2-B
JEITA
Embossed type (Thermo-compression sealing) : 3
DRC5614T0L
Silicon NPN epitaxial planar type
For digital circuits / Muting
DRC2614T in SMini3 type package
Features
Marking Symbol:
Rating Unit
1.
2.
3.
Code
Base
Emitter
―
Panasonic
000 pcs / reel (standard)
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
C
B
R
1
E
Doc No.
TT4-EA-12546
Revision.
3
Established
:
2010-04-22
Revised
:
2014-03-20
Product Standards
Transistors with Built-in Resistor
DRC5614T0L
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
2. *1 Pulse Test
*2 On resistance test circuit
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
mV
R1
Ron
VI = 7 V, RL = 1 k
,
f = 1 kHz
-30% 10
IC = 50 mA, IB = 2.5 mA 80
VEB = 5 V, IC = 0 1 μA
600 - VCE = 5 V, IC = 50 mA 100
1 μA
IE = 10 μA, IC = 0 5
V
V
V
2.5
IC = 10 μA, IE = 0 30
IC = 1 mA, IB = 0 20
VCB = 30 V, IE = 0
Conditions Max
4
Min Typ Unit
2of
Parameter Symbol
Collector-emitter voltage (Base open) VCEO
Collector-base cutoff current (Emitter open)
ICBO
Collector-base voltage (Emitter open) VCBO
Input resistance
On resistanc
*2
Emitter-base voltage (Collector open) VEBO
Collector-emitter saturation voltage VCE(sat)
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
*1
hFE
+30%
k
Doc No.
TT4-EA-12546
Revision.
3
Established
:
2010-04-22
Revised
:
2014-03-20
Product Standards
Transistors with Built-in Resistor
DRC5614T0L
Technical Data ( reference )
Page
3of4
0
50
100
150
200
0 20 40 60 80 100 120 140 160 180 200
Total power dissipation PT (mW)
Ambient temperature Ta (℃)
PT - Ta
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
IB = 1.0 mA
0
0.05
0.1
0.15
0.2
0.25
0.3
024681012
Collector current IC (A)
Collector-emitter voltage VCE (V)
IC - VCE
Ta = 25 ℃
0
100
200
300
400
500
600
0.001 0.01 0.1 1
Forward current transfer ratio hFE
Collector current IC (A)
hFE - IC
Ta = 85 ℃
25 ℃
-40 ℃
VCE = 10 V
0.01
0.1
1
10
0.001 0.01 0.1 1
Collector-emitter saturation voltage
VCE(sat) (V)
Collector current IC (A)
VCE(sat) - IC
IC/IB = 20
Ta = 85 ℃
25 ℃
-40 ℃
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
0 0.2 0.4 0.6 0.8 1 1.2
Output current Io (A)
Input voltage VIN (V)
Io - VIN
25 ℃
Vo = 5 V
Ta = 85 ℃
-40 ℃
0.1
1
10
100
0.0001 0.001 0.01 0.1
Input voltage VIN (V)
Output current Io (A)
VIN - Io
Vo = 0.2 V
85 ℃
25 ℃
Ta = -40 ℃
Doc No.
TT4-EA-12546
Revision.
3
Established
:
2010-04-22
Revised
:
2014-03-20
P1-P3P4-P5

DRC5614T0L

Mfr. #:
Buy DRC5614T0L
Manufacturer:
Panasonic
Description:
Bipolar Transistors - Pre-Biased TRANS W/ BLT-IN RES FLT LD 2.0x2.1mm
Lifecycle:
New from this manufacturer.
Delivery:
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