IRF3704 Datasheet IRF3704L, IRF3704STRL, IRF3704 | P1-P3

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8/22/00

IRF3704

IRF3704S

SMPS MOSFET

HEXFET

®

Power MOSFET

Benefits

l Ultra-Low Gate Impedance

l Very Low R

DS(on)

l Fully Characterized Avalanche Voltage

and Current

V

DSS

R

DS(on)

max I

D

20V 9.0mΩ 77A



Notes  through  are on page 10

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

Drain-Source Voltage 20 V

V

GS

Gate-to-Source Voltage ± 20 V

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V 77 

I

D

@ T

C

= 70°C Continuous Drain Current, V

GS

@ 10V 64 A

I

DM

Pulsed Drain Current 308

P

D

@T

C

= 25°C Maximum Power Dissipation 87 W

P

D

@T

C

= 70°C Maximum Power Dissipation 61 W

Linear Derating Factor 0.59 mW/°C

T

J

, T

STG

Junction and Storage Temperature Range -55 to + 175 °C

* When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

D

2

Pak

IRF3704S

TO-220AB

IRF3704

TO-262

IRF3704L

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 1.73

R

θCS

Case-to-Sink, Flat, Greased Surface  0.50 ––– °C/W

R

θJA

Junction-to-Ambient ––– 62

R

θJA

Junction-to-Ambient (PCB mount)* ––– 40

IRF3704L

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

Applications

l High Frequency Buck Converters for

Computer Processor Power

PD - 93888B

IRF3704/3704S/3704L

2 www.irf.com

Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

Symbol Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 216 mJ

I

AR

Avalanche Current ––– 71 A

Avalanche Characteristics

S

D

G

Diode Characteristics

77

308

A

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 42 ––– ––– SV

DS

= 10V, I

D

= 57A

Q

g

Total Gate Charge ––– 19 ––– I

D

= 28.4A

Q

gs

Gate-to-Source Charge ––– 8.1 ––– nC V

DS

= 10V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 6.4 ––– V

GS

= 4.5V 

Q

oss

Output Gate Charge ––– 16 24 V

GS

= 0V, V

DS

= 10V

t

d(on)

Turn-On Delay Time ––– 8.4 ––– V

DD

= 10V

t

r

Rise Time ––– 98 ––– I

D

= 28.4A

t

d(off)

Turn-Off Delay Time ––– 12 ––– R

G

= 1.8Ω

t

f

Fall Time ––– 5.0 ––– V

GS

= 4.5V 

C

iss

Input Capacitance ––– 1996 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 1085 ––– V

DS

= 10V

C

rss

Reverse Transfer Capacitance ––– 155 ––– pF ƒ = 1.0MHz

V

SD

Diode Forward Voltage

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

––– 0.88 1.3 V T

J

= 25°C, I

S

= 35.5A, V

GS

= 0V 

––– 0.82 ––– T

J

= 125°C, I

S

= 35.5A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 38 57 ns T

J

= 25°C, I

F

= 35.5A, V

R

=20V

Q

rr

Reverse Recovery Charge ––– 45 68 nC di/dt = 100A/µs



t

rr

Reverse Recovery Time ––– 41 62 ns T

J

= 125°C, I

F

= 35.5A, V

R

=20V

Q

rr

Reverse Recovery Charge ––– 50 75 nC di/dt = 100A/µs



Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 20 ––– ––– VV

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.021 ––– V/°C Reference to 25°C, I

D

= 1mA

––– 6.3 9.0 V

GS

= 10V, I

D

= 15A 

––– 9.8 13.5 V

GS

= 4.5V, I

D

= 12A 

V

GS(th)

Gate Threshold Voltage 1.0 ––– 3.0 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 20

µA

V

DS

= 16V, V

GS

= 0V

––– ––– 100 V

DS

= 16V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V

GS

= 16V

Gate-to-Source Reverse Leakage ––– ––– -200

nA

V

GS

= -16V

Static @ T

J

= 25°C (unless otherwise specified)

I

GSS

I

DSS

Drain-to-Source Leakage Current

R

DS(on)

Static Drain-to-Source On-Resistance

mΩ

IRF3704/3704S/3704L

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Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

, Drain-to-Source Current (A)

3.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 10.0V

9.0V

8.0V

7.0V

6.0V

5.0V

4.5V

BOTTOM 3.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

, Drain-to-Source Current (A)

3.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 10.0V

9.00V

8.0V

7.0V

6.0V

5.0V

4.5V

BOTTOM 3.5V

10

100

1000

3.0 4.0 5.0 6.0 7.0 8.0



V = 15V

20

µ

s PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D



T = 25 C

J

°



T = 175 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°



V =

I =

GS

D

10V

77A

IRF3704

IRF3704

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