IPB180N04S401ATMA1

P1-P3 P4-P6 P7-P9

IPB180N04S4-01

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

1)

180 A

T

C

=100 °C,

V

GS

=10 V

2)

180

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

720

Avalanche energy, single pulse

E

AS

I

D

=90 A

550 mJ

Avalanche current, single pulse

I

AS

-

180 A

Gate source voltage

V

GS

- ±20 V

Power dissipation

P

tot

T

C

=25 °C

188 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

40 V

R

DS(on)

1.3

mΩ

I

D

180 A

Product Summary

PG-TO263-7-3

Type Package Marking

IPB180N04S4-01 PG-TO263-7-3 4N0401

Rev. 1.0 page 1 2010-04-13

IPB180N04S4-01

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 0.8 K/W

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

--40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

= 1 mA

40 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=140 µA

2.0 3.0 4.0

Zero gate voltage drain current

I

DSS

V

DS

=40 V, V

GS

=0 V,

T

j

=25 °C

- 0.06 1 µA

V

DS

=18 V, V

GS

=0 V,

T

j

=85 °C

2)

-120

Gate-source leakage current

I

GSS

V

GS

=20 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10 V, I

D

=100 A

- 1.1 1.3 mΩ

Values

Rev. 1.0 page 2 2010-04-13

IPB180N04S4-01

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 10770 14000 pF

Output capacitance

C

oss

- 2450 3150

Reverse transfer capacitance

C

rss

- 80 184

Turn-on delay time

t

d(on)

-35-ns

Rise time

t

r

-24-

Turn-off delay time

t

d(off)

-38-

Fall time

t

f

-41-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

-5977nC

Gate to drain charge

Q

gd

-1944

Gate charge total

Q

g

- 135 176

Gate plateau voltage

V

plateau

- 5.5 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 180 A

Diode pulse current

2)

I

S,pulse

- - 720

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=100 A,

T

j

=25 °C

- 0.9 1.3 V

Reverse recovery time

2)

t

rr

-64-ns

Reverse recovery charge

2)

Q

rr

-88-nC

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 0.8 K/W the chip is able to carry 293 A at 25°C.

V

R

=20 V, I

F

=50A,

di

F

/dt =100 A/µs

T

C

=25 °C

Values

V

GS

=0 V, V

DS

=25 V,

f =1 MHz

V

DD

=20 V, V

GS

=10 V,

I

D

=180 A, R

G

=3.5 Ω

V

DD

=32 V, I

D

=180 A,

V

GS

=0 to 10 V

Rev. 1.0 page 3 2010-04-13

P1-P3 P4-P6 P7-P9

IPB180N04S401ATMA1

Mfr. #:

Buy IPB180N04S401ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CHANNEL_30/40V

Lifecycle:

New from this manufacturer.

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IPB180N04S401ATMA1