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CR03AM-16A#B00

P1-P3P4-P6P7-P8
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 4 of 7
Aug 25, 2015
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Ambient Temperature (°C)Ambient Temperature (°C) Ambient Temperature (°C)
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
Average On-State Current (A)
160
120
60
40
20
140
100
80
0
θ = 30°
60° 120°
90° 180°
0.3
0.2
0.1
0.4
0
0.50.4
0
0.1 0.2 0.3
0.50.40
0.1 0.2 0.3
0.50.40
0.1 0.2 0.3
0.50.40
0.1 0.2 0.3
0.50.40
0.1 0.2 0.3
0.50.40
0.1 0.2
0.3
0.5
θ = 30°
60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
0
θ = 30°
60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
0
θ = 30°
60°
90°
180°
270°
DC
120°
160
120
60
40
20
140
100
80
0
θ = 30
°
120°
180°
DC
270°
60°
90°
160
120
60
40
20
140
100
80
0
60° 120° 180°θ = 30° 90°
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
θ θ
360°
Resistive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 5 of 7
Aug 25, 2015
10
4
10
3
10
2
10
1
160
120
60
40
20
140
100
80
0
10
2
10
1
10
0
10
−1
–40 0 40 80 120 160 –40 0 40 80120160
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
×
100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
160
120
60
40
20
140
100
80
0
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/μs)
×
100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
V
D
=12V
R
GK
=1kΩ
Junction Temperature (°C)
×
100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example
–40 0 40 80 120 160
R
GK
= 1kΩ
Typical Example
160
120
60
40
20
140
100
80
0
10
0
10
1
10
2
10
3
10
1
10
2
10
3
Typical Example
Typical Example
Typical Distribution
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Current Pulse Width (μs)
Gate Trigger Current (μA)
Ta = 25°C
Typical Example
Tj = 125°C
R
GK
=1kΩ
CR03AM-16A Preliminary
R07DS0987EJ0400 Rev.4.00 Page 6 of 7
Aug 25, 2015
Package dimensions
SC-43A 0.23g
MASS[Typ.]
T920PRSS0003EA-A
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
φ5.0Max
4.4
3.6
11.5Min 5.0Max
1.25
Circumscribed circle φ0.7
1.25
1.1
Package Name
TO-92*
MASS (Typ) [g]
0.23
Unit: mm
Previous CodeRENESAS Code
PRSS0003DJ-A TO-92
JEITA Package Code
SC-43A
4.58 ± 0.2
14.47 ± 0.4
1.02 ± 0.1
0.46 ± 0.1
1.27
(3.86 MAX)
0.38
+0.10
−0.05
4.58
+0.25
−0.15
P1-P3P4-P6P7-P8

CR03AM-16A#B00

Mfr. #:
Buy CR03AM-16A#B00
Manufacturer:
Renesas Electronics
Description:
SCRs Thyristor
Lifecycle:
New from this manufacturer.
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