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BC817RAZ

P1-P3P4-P6P7-P9P10-P11
Nexperia
BC817RA
45 V, 500 mA NPN/NPN general-purpose double transistors
BC817RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 20 June 2017 4 / 11
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 358 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 250 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-025825
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0
0.02
0.05
0.10
0.20
0.50
0.75
0.33
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
BC817RA
45 V, 500 mA NPN/NPN general-purpose double transistors
BC817RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 20 June 2017 5 / 11
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CB
= 20 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nAI
CBO
collector-base cut-off
current
V
CB
= 20 V; I
E
= 0 A; T
j
= 150 °C - - 5 µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 1 V; I
C
= 100 mA; T
amb
= 25 °C 160 - 400 h
FE
DC current gain
V
CE
= 1 V; I
C
= 500 mA; T
amb
= 25 °C [1] 40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA; T
amb
= 25 °C [1] - - 700 mV
V
BE
base-emitter voltage V
CE
= 1 V; I
C
= 500 mA; T
amb
= 25 °C [1] - - 1.2 V
C
C
collector capacitance V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 3 - pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
100 - - MHz
[1] Pulse test: t
p
≤ 300 µs; δ ≤ 0.02
006aaa132
400
200
600
h
FE
0
I
C
(mA)
10
- 1
10
3
10
2
1 10
(1)
(2)
(3)
V
CE
= 1 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 3. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 542 31
aaa-007676
0.4
0.8
1.2
I
C
(A)
0
I
B
(mA) = 13
11.7
10.4
9.1
7.8
6.5
5.2
3.9
2.6
1.3
T
amb
= 25 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Nexperia
BC817RA
45 V, 500 mA NPN/NPN general-purpose double transistors
BC817RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 20 June 2017 6 / 11
aaa-007677
0.4
0.8
1.2
V
BE
(V)
0.0
I
C
(mA)
10
-1
10
3
10
2
1 10
(1)
(2)
(3)
V
CE
= 1 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 5. Base-emitter voltage as a function of collector
current; typical values
006aaa135
I
C
(mA)
10
- 1
10
3
10
2
1 10
1
10
V
BEsat
(V)
10
- 1
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. Base-emitter saturation voltage as a function of
collector current; typical values
006aaa138
10
- 1
10
- 2
1
V
CEsat
(V)
10
- 3
I
C
(mA)
10
- 1
10
3
10
2
1 10
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
P1-P3P4-P6P7-P9P10-P11

BC817RAZ

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Nexperia
Description:
Bipolar Transistors - BJT BC817RA/SOT1268 DFN1412-6
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