GP2S40J0000F

4
Sheet No.: D3-A02001EN
GP2S40J0000F
Absolute Maximum Ratings
Electro-optical Characteristics
(T
a
=
25˚C)
Parameter Symbol Rating Unit
Input
Forward current I
F
50 mA
Reverse voltage V
R
6V
Power dissipation P
D
75 mW
Output
Collector-emitter voltage
V
CEO
35 V
Emitter-collector voltage
V
ECO
6V
Collector current I
C
20 mA
Collector power dissipation P
C
75 mW
Total power dissipation P
tot
100 mW
Operating temperature T
opr
25 to
+
85 ˚C
Storage temperature T
stg
40 to
+
100 ˚C
1
Soldering temperature T
sol
260 ˚C
1 For 5s
(T
a
=
25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input
Forward voltage V
F
I
F
=
20mA
1.2 1.4 V
Reverse current I
R
V
R
=
3V
−−
10
μ
A
Output Collector dark current I
CEO
V
CE
=
20V
1 100 nA
Transfer
charac-
teristics
2
Collector Current I
C
I
F
=
20mA, V
CE
=
5V 0.5
3mA
3
Leak current I
LEAK
I
F
=
20mA, V
CE
=
5V
−−
500 nA
Response time
Rise time t
r
V
CE
=
2V, I
C
=
100
μ
A,
R
L
=
1k
Ω
, d
=
4mm
50 150
μ
s
Fall time t
f
50 150
2 The condition and arrangement of the re ective object are shown below.
3 No re ective object
Soldering area
1mm or more
Test Arrangement for Collector Current
Al evaporation
d=4mm glass plate
5
Sheet No.: D3-A02001EN
GP2S40J0000F
Fig.5 Collector Current vs.
Collector-Emitter Voltage
Fig.6 Relative Collector Current vs.
Ambient Temperature
Fig.3 Forward Current vs. Forward
Voltage
Fig.4 Collector Current vs.
Forward Current
Forward current I
F
(mA)
Forward voltage V
F
(V)
0 0.5 1 1.5 2
1
2.5 3
25˚C
0˚C
25˚C
50˚C
T
a
=75˚C
10
100
Collector current I
C
(mA)
Forward current I
F
(mA)
0.6
1.8
1.2
2.4
3
0
0
5 1015202530
V
CE
=5V
T
a
=25˚C
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
3
2.4
1.8
1.2
0.6
0
0 2.4 4.8 7.2 9.6 12
5mA
10mA
20mA
30mA
40mA
T
a
=25˚C
I
F
=50mA
Relative collector current (%)
Ambient temperature T
a
(˚C)
0255075
0
I
F
=20mA
V
CE
=5V
25
50
25
75
100
125
150
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Power dissipation P (mW)
Ambient temperature T
a
(˚C)
25 0 25 50 75 100
0
20
15
40
60
85
100
120
80
75
P
tot
P, P
c
Forward current I
F
(mA)
Ambient temperature T
a
(˚C)
25 0 25 50 75 100
0
10
20
30
40
50
60
85
6
Sheet No.: D3-A02001EN
GP2S40J0000F
Fig.7 Collector Dark Current vs.
Ambient Temperature
Fig.8 Response Time vs. Load
Resistance
Fig.9
Test Circuit for Response Time
Fig.10
Detecting Position Characteristics (1)
Fig.11
Detecting Position Characteristics (2)
Collector dark current I
CEO
(A)
Ambient temperature T
a
(˚C)
25 50 75 1000
10
6
10
7
10
8
10
9
10
10
V
CE
= 20V
10%
90%
t
d
t
r
t
s
t
f
V
CC
R
L
Measuring
terminal
Input
Output
Input
Reflector Plate
Response time t
r
, t
f
, t
d
, t
s
(μs)
Load resistance R
L
(KΩ)
1
10
100
1 000
0.1
1 10 100
V
CE
=5V
I
C
=100mA
T
a
=25˚C
t
s
t
d
t
f
t
r
Relative collector current (%)
Sensor moving distance L (mm)
1
20
40
60
80
100
10
30
50
70
90
234 567
4mm
1mm
+
L= 0
OMS
IF=20mA
V
CE=5V
T
a=25˚C
White Black
Test Card
0
0
Relative collector current (%)
Sensor moving distance L (mm)
765432
90
70
50
30
10
100
80
60
40
20
1
4mm
1mm
+
L=0
I
F
=20mA
V
CE
=5V
T
a
=25˚C
White Black
0
0
Fig.12
Relative Collector Current vs.
Distance (Reference value)
Relative collector current (%)
Distance d (mm)
Al evaporation
glass
I
F
=20mA
V
CE
=5V
T
a
=25˚C
0 246810
20
40
60
80
100
d
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.

GP2S40J0000F

Mfr. #:
Manufacturer:
Sharp Microelectronics
Description:
PHOTOINTERRUPTER REFLEC 3MM PC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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