74HC4049D Datasheet 74HC4049D, 74HC4050D | P1-P3

74HC4049D,74HC4050D

1

CMOS Digital Integrated Circuits Silicon Monolithic

74HC4049D,74HC4050D

Start of commercial production

2016-03

1.

1. Functional Description

Functional Description

• Hex Buffer

74HC4049D: HEX BUFFER/CONVERTER (INVERTING)

74HC4050D: HEX BUFFER/CONVERTER

2.

2. General

General

The 74HC4049D and 74HC4050D are high speed CMOS HEX BUFFERs fabricated with silicon gate C

2

MOS

technology.

They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power

dissipation.

The 74HC4049D is an inverting buffer, while the 74HC4050D is a non-inverting buffer. The internal circuits

are composed of 3-stages (74HC4049D) or 2-stages (74HC4050D) of inverter, which provided high noise immunity

and stable output.

Input protection circuits are different from those of other high speed CMOS IC's. They eliminate the diodes on

the V

CC

side thus providing of logic-level conversion from high-level voltages up to 15 V to low-level voltages.

They are useful for battery back up circuits, because input voltage can be applied on IC's which are not biased

by V

CC

.

3.

3. Features

Features

(1) High speed: t

pd

= 8 ns (typ.) at V

CC

= 6.0 V

(2) Low power dissipation: I

CC

= 1.0 µA (max) at T

a

= 25 

(3) Balanced propagation delays: t

PLH

≈ t

PHL

(4) Wide operating voltage range: V

CC(opr)

= 2.0 V to 6.0 V

4.

4. Packaging

Packaging

SOIC16

2016-07-07

Rev.3.0

74HC4049D,74HC4050D

2

5.

5. Pin Assignment

Pin Assignment

74HC4049D 74HC4050D

6.

6. Marking

Marking

74HC4049D 74HC4050D

7.

7. IEC Logic Symbol

IEC Logic Symbol

74HC4049D 74HC4050D

8.

8. Truth Table

Truth Table

Input A

L

H

Output Y (74HC4049D)

H

L

Output Y (74HC4050D)

L

H

2016-07-07

Rev.3.0

74HC4049D,74HC4050D

3

9.

9. Internal Equivalent Circuit

Internal Equivalent Circuit

74HC4049D 74HC4050D

10.

10. Absolute Maximum Ratings (Note)

Absolute Maximum Ratings (Note)

Characteristics

Supply voltage

Input voltage

Output voltage

Input diode current

Output diode current

Output current

V

CC

/ground current

Power dissipation

Storage temperature

Symbol

V

CC

V

IN

V

OUT

I

IK

I

OK

I

OUT

I

CC

P

D

T

stg

Note

(Note 1)

Rating

-0.5 to 7.0

-0.5 to 18.0

-0.5 to V

CC

+ 0.5

-20

±20

±35

±75

500

-65 to 150

Unit

V

mA

mW



Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even

destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: DC input voltage (V

IN

) specified is measured to GND and is not related to V

CC

.

Recommended operating range is 0 V to 15 V and it is possible to convert logic-levels from 15 V to 5 V or 5 V

to 2 V.

2016-07-07

Rev.3.0

74HC4049D

74HC4049D

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