I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 4GB (Die Revision A)
Values are for the MT40A512M8 DDR4 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
512 480 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, I
PP
current I
PP0
32 32 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
544 520 mA
Precharge standby current I
DD2N
400 368 mA
Precharge standby ODT current I
DD2NT
464 432 mA
Precharge power-down current I
DD2P
256 240 mA
Precharge quiet standby current I
DD2Q
328 312 mA
Active standby current I
DD3N
536 504 mA
Active standby I
PP
current I
PP3N
24 24 mA
Active power-down current I
DD3P
352 352 mA
Burst read current I
DD4R
1280 1200 mA
Burst write current I
DD4W
1440 1280 mA
Burst refresh current (1x REF) I
DD5B
1536 1520 mA
Burst refresh I
PP
current (1x REF) I
PP5B
176 176 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
160 160 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
216 216 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
80 80 mA
Auto self refresh current (25°C) I
DD6A
72 72 mA
Auto self refresh current (45°C) I
DD6A
80 80 mA
Auto self refresh current (75°C) I
DD6A
128 128 mA
Auto self refresh I
PP
current I
PP6X
24 24 mA
Bank interleave read current I
DD7
1680 1480 mA
Bank interleave read I
PP
current I
PP7
112 96 mA
Maximum power-down current I
DD8
144 144 mA
4GB (x64, SR) 260-Pin DDR4 SODIMM
I
DD
Specifications
CCMTD-1725822587-9555
atf8c512x64hz.pdf – Rev. K 11/16 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 14: DDR4 I
DD
Specifications and Conditions – 4GB (Die Revision B)
Values are for the MT40A512M8 DDR4 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
400 384 384 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, I
PP
current I
PP0
32 32 32 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
544 520 520 mA
Precharge standby current I
DD2N
288 272 272 mA
Precharge standby ODT current I
DD2NT
400 368 368 mA
Precharge power-down current I
DD2P
144 144 144 mA
Precharge quiet standby current I
DD2Q
240 240 240 mA
Active standby current I
DD3N
368 360 360 mA
Active standby I
PP
current I
PP3N
24 24 24 mA
Active power-down current I
DD3P
200 200 200 mA
Burst read current I
DD4R
1200 1104 1104 mA
Burst write current I
DD4W
1040 960 960 mA
Burst refresh current (1x REF) I
DD5B
1536 1536 1536 mA
Burst refresh I
PP
current (1x REF) I
PP5B
200 200 200 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
144 144 144 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
200 200 200 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
160 160 160 mA
Auto self refresh current (25°C) I
DD6A
72 72 72 mA
Auto self refresh current (45°C) I
DD6A
96 96 96 mA
Auto self refresh current (75°C) I
DD6A
200 200 200 mA
Auto self refresh I
PP
current I
PP6X
24 24 24 mA
Bank interleave read current I
DD7
1680 1520 1520 mA
Bank interleave read I
PP
current I
PP7
96 96 96 mA
Maximum power-down current I
DD8
104 104 104 mA
4GB (x64, SR) 260-Pin DDR4 SODIMM
I
DD
Specifications
CCMTD-1725822587-9555
atf8c512x64hz.pdf – Rev. K 11/16 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
SPD EEPROM Operating Conditions
For the latest SPD data, refer to Micron's SPD page: micron.com/spd.
Table 15: SPD EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Nom Max Units
Supply voltage V
DDSPD
2.5 V
Input low voltage: logic 0; all inputs V
IL
–0.5 V
DDSPD
×
0.3
V
Input high voltage: logic 1; all inputs V
IH
V
DDSPD
×
0.7
V
DDSPD
+
0.5
V
Output low voltage: 3mA sink current V
DDSPD
> 2V V
OL
0.4 V
Input leakage current: (SCL, SDA) V
IN
= V
DDSPD
or V
SSSPD
I
LI
±5 µA
Output leakage current: V
OUT
= V
DDSPD
or V
SSSPD
, SDA in High-Z I
LO
±5 µA
Notes:
1. Table is provided as a general reference. Consult JEDEC JC-42.4 EE1004 and TSE2004 de-
vice specifications for complete details.
2. All voltages referenced to V
DDSPD
.
Table 16: SPD EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units
Clock frequency
t
SCL 10 1000 kHz
Clock pulse width HIGH time
t
HIGH 260 ns
Clock pulse width LOW time
t
LOW 500 ns
Detect clock LOW timeout
t
TIMEOUT 25 35 ms
SDA rise time
t
R 120 ns
SDA fall time
t
F 120 ns
Data-in setup time
t
SU:DAT 50 ns
Data-in hold time
t
HD:DI 0 ns
Data out hold time
t
HD:DAT 0 350 ns
Start condition setup time
t
SU:STA 260 ns
Start condition hold time
t
HD:STA 260 ns
Stop condition setup time
t
SU:STO 260 ns
Time the bus must be free before a new transi-
tion can start
t
BUF 500 ns
Write time
t
W 5 ms
Warm power cycle time off
t
POFF 1 ms
Time from power on to first command
t
INIT 10 ms
Note:
1. Table is provided as a general reference. Consult JEDEC JC-42.4 EE1004 and TSE2004 de-
vice specifications for complete details.
4GB (x64, SR) 260-Pin DDR4 SODIMM
SPD EEPROM Operating Conditions
CCMTD-1725822587-9555
atf8c512x64hz.pdf – Rev. K 11/16 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.

MTA8ATF51264HZ-2G6B1

Mfr. #:
Manufacturer:
Micron
Description:
IC DRAM 32G PARALLEL 1333MHZ
Lifecycle:
New from this manufacturer.
Delivery:
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