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NB7L111MMN

P1-P3P4-P6P7-P9P10-P12P13-P13
NB7L111M
www.onsemi.com
4
Table 3. ATTRIBUTES
Characteristics Value
Input Default State Resistors R1, R3
R2
56 kW
75 kW
ESD Protection Human Body Model
Machine Model
> 1400 V
> 80 V
Moisture Sensitivity (Note 3) Pb Pkg Pb−Free Pkg
QFN−52 Level 2 Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 339
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
3. For additional information, see Application Note AND8003/D.
Table 4. MAXIMUM RATINGS (Note 4)
Symbol
Parameter Condition 1 Condition 2 Rating Unit
V
CC
Positive Power Supply V
EE
= 0 V 3.6 V
V
I
Input Voltage V
EE
= 0 V V
EE
v V
I
v V
CC
3.6 V
V
INPP
Differential Input Voltage |CLK − CLK| V
CC
− V
EE
≥ 2.8 V
V
CC
− V
EE
< 2.8 V
2.8
|V
CC
− V
EE
|
V
V
I
in
Input Current Through R
T
(50 W Resistor)
Continuous
Surge
25
50
mA
mA
I
out
Output Current Continuous
Surge
25
50
mA
mA
T
A
Operating Temperature Range QFN52 −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient)
(Note 5)
0 lfpm
500 lfpm
QFN52 25
19.6
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) 1S2P (Note 8) QFN52 21 °C/W
T
sol
Wave Solder Pb
Pb−Free
265
265
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
4. Maximum Ratings are those values beyond which device damage may occur.
5. JEDEC standard multilayer board − 1S2P (1 signal, 2 power).
NB7L111M
www.onsemi.com
5
Table 5. DC CHARACTERISTICS V
CC
= 2.375 V 2.625 V and 3.135 V to 3.465 V, V
EE
= 0 V, T
A
= −40°C to +85°C (Notes 6 and 7)
Symbol
Characteristic Min Typ Max Unit
I
CC
Power Supply Current (Inputs and Outputs Open)
V
CC
= 2.375 V to 2.625 V
V
CC
= 3.135 V to 3.465 V
255
270
290
305
325
340
mA
V
OH
Output HIGH Voltage (Notes 6 and 7) V
CC
− 40 V
CC
− 20 V
CC
mV
V
OL
Output LOW Voltage (Notes 6 and 7)
V
CC
= 2.375 V to 2.625 V
V
CC
= 3.135 V to 3.465 V
V
CC
− 440
V
CC
− 490
V
CC
− 350
V
CC
− 400
V
CC
– 290
V
CC
− 340
mV
DIFFERENTIAL INPUT DRIVEN SINGLE−ENDED (See Figures 13 and 15)
V
th
Input Threshold Reference Voltage Range (Note 8) 1125 V
CC
– 75 mV
V
IH
Single−ended Input HIGH Voltage (Note 7) V
th
+ 75 V
CC
mV
V
IL
Single−ended Input LOW Voltage (Note 7) V
EE
V
CC
– 150 mV
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (See Figures 14 and 16)
V
IHD
Differential Input HIGH Voltage 1200 V
CC
mV
V
ILD
Differential Input LOW Voltage V
EE
V
CC
– 75 mV
V
CMR
Input Common Mode Range (Differential Configuration) (Note 9) 1163 V
CC
– 37 mV
V
ID
Differential Input Voltage (V
IHD
− V
ILD
) 75 2500 mV
I
IH
Input HIGH Current CLK[0−1]/CLK[0−1]
(Termination Pins Open) SEL/SEL
−100
−150
5 100
150
mA
I
IL
Input LOW Current CLK[0−1]/CLK[0−1]
(Termination Pins Open) SEL/SEL
−100
−150
5 100
150
mA
R
TIN
Internal Input Termination Resistor 45 50 55
W
R
TOUT
Internal Output Termination Resistor 45 50 55
W
R
Temp
Coef
Internal I/O Termination Resistor Temperature Coefficient −3.75
mW/C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
6. CML outputs require 50 W receiver termination resistors to V
CC
for proper operation.
7. Input and output parameters vary 1:1 with V
CC
.
8. V
th
is applied to the complementary input when operating in single−ended mode.
9. V
CMR
(MIN) varies 1:1 with V
EE
, V
CMR
(MAX) varies 1:1 with V
CC
.
NB7L111M
www.onsemi.com
6
Table 6. AC CHARACTERISTICS V
CC
= 2.375 V to 2.625 V and 3.135 V to 3.465 V, V
EE
= 0 V; (Note 10)
Symbo
l
Characteristic
−40°C 25°C 85°C
Uni
t
Min Typ Max Min Typ Max Min Typ Max
V
OUTPP
Output Voltage Amplitude (@ V
inppmin
)
(See Figures 3, 4, 5, and 6)
V
CC
= 2.375 V to 2.625 V
f
in
≤ 3 GHz
f
in
≤ 5.5 GHz
V
CC
= 3.135 V to 3.465 V
f
in
≤ 3 GHz
f
in
≤ 5.5 GHz
240
115
250
130
330
220
350
250
240
115
250
130
330
220
350
250
240
115
250
130
330
220
350
250
mV
f
DATA
Maximum Operating Data Rate 5 6 5 6 5 6 Gb/s
t
PLH
,
t
PHL
Differential Input−to−Output Propagation Delay
@ 1 GHz (See Figures 7 and 11) CLK−Q
SEL−Q
200
290
240
340
280
390
200
290
240
340
280
390
200
290
240
340
280
390
ps
t
SKEW
Duty Cycle Skew (Note 11)
Within Device Skew
Device−to−Device Skew (Note 15)
2
10
15
15
20
80
2
10
15
15
20
80
2
10
15
15
20
80
ps
t
JITTER
RMS Random Clock Jitter (Note 13)
f
in
= 3 GHz
f
in
= 5.5 GHz
Peak−to−Peak Data Dependent Jitter
(Note 14) f
DATA
= 3.125 Gb/s
f
DATA
= 5 Gb/s
f
DATA
= 6.125 Gb/s
0.2
0.2
6
15
15
0.5
0.5
15
25
25
0.2
0.2
6
15
15
0.5
0.5
15
25
25
0.2
0.2
6
15
15
0.5
0.5
15
25
25
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration)
(Note 12 and Figures 3, 4, 5, and 6)
75 400 2500 75 400 2500 75 400 2500 mV
t
r
t
f
Output Rise/Fall Times @ 1 GHz
(20% − 80%)
50 75 50 75 50 75 ps
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
10.Measured by forcing V
INPP
(MIN) from a 50% duty cycle clock source. All loading with an external R
L
= 50 W to V
CC
. Input edge rates 40 ps
(20% − 80%).
11. Duty cycle skew is measured between differential outputs using the deviations of the sum of Tpw− and Tpw+ @ 1 GHz.
12.V
INPP
(MAX) cannot exceed V
CC
− V
EE
. Input voltage swing is a single−ended measurement operating in differential mode.
13.Additive RMS jitter with 50% duty cycle clock signal.
14.Additive peak−to−peak data dependent jitter with input NRZ data at PRBS 2
23
−1.
15.Device−to−device skew is measured between outputs under identical transition and conditions @ 1 GHz.
P1-P3P4-P6P7-P9P10-P12P13-P13

NB7L111MMN

Mfr. #:
Buy NB7L111MMN
Manufacturer:
ON Semiconductor
Description:
Clock Drivers & Distribution 2.5V/3.3V 6.125Gb/s
Lifecycle:
New from this manufacturer.
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