IRG4IBC20WPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 26 38 I
C
= 6.5A
Q
ge
Gate - Emitter Charge (turn-on) — 3.7 5.5 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) — 10 15 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 22 —
t
r
Rise Time — 14 — T
J
= 25°C
t
d(off)
Turn-Off Delay Time — 110 160 I
C
= 6.5A, V
CC
= 480V
t
f
Fall Time — 64 96 V
GE
= 15V, R
G
= 50Ω
E
on
Turn-On Switching Loss — 0.06 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 0.08 — mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss — 0.14 0.2
t
d(on)
Turn-On Delay Time — 21 — T
J
= 150°C,
t
r
Rise Time — 15 — I
C
= 6.5A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 150 — V
GE
= 15V, R
G
= 50Ω
t
f
Fall Time — 150 — Energy losses include "tail"
E
ts
Total Switching Loss — 0.34 — mJ See Fig. 10, 11, 14
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
C
ies
Input Capacitance — 490 — V
GE
= 0V
C
oes
Output Capacitance — 38 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 8.8 — ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 — — V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.48 — V/°C V
GE
= 0V, I
C
= 1.0mA
— 2.16 2.6 I
C
= 6.5A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage — 2.55 — I
C
= 13A See Fig.2, 5
— 2.05 — I
C
= 6.5A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -8.8 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 5.5 8.3 — S V
CE
= 100 V, I
C
= 6.5A
— — 250 V
GE
= 0V, V
CE
= 600V
— — 2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
— — 1000 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 50Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
t = 60s, f = 60Hz
