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TK20A60U(Q,M)

P1-P3P4-P6
TK20A60U
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK20A60U
Switching Regulator Applications
• Low drain-source ON-resistance: R
DS (ON)
= 0.165 Ω (typ.)
• High forward transfer admittance: ⎪Y
fs
⎪ = 12 S (typ.)
• Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 600 V)
• Enhancement-mode: V
th
= 3.0 to 5.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
20
Drain current
Pulse (Note 1) I
DP
40
A
Drain power dissipation (Tc = 25°C)
P
D
45 W
Single pulse avalanche energy
(Note 2)
E
AS
144 mJ
Avalanche current I
AR
20 A
Repetitive avalanche energy (Note 3) E
AR
4.5 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.78 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 0.63 mH, R
G
= 25 Ω, I
AR
= 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC ⎯
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
1: Gate
2: Drain
3: Source
Internal Connection
Start of commercial production
2008-05
TK20A60U
2013-11-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±30 V, V
DS
= 0 V ⎯ ⎯ ±1 μA
Drain cut-off current I
DSS
V
DS
= 600 V, V
GS
= 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 600 ⎯ ⎯ V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 3.0 ⎯ 5.0 V
Drain-source ON-resistance R
DS (ON)
V
GS
= 10 V, I
D
= 10 A ⎯ 0.165 0.19
Ω
Forward transfer admittance |Y
fs
| V
DS
= 10 V, I
D
= 10 A 3 12 ⎯ S
Input capacitance C
iss
⎯ 1470 ⎯
Reverse transfer capacitance C
rss
⎯ 150 ⎯
Output capacitance C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
⎯ 3500 ⎯
pF
Rise time t
r
⎯
40
⎯
Turn-on time t
on
⎯
80
⎯
Fall time t
f
⎯
12
⎯
Switching time
Turn-off time t
off
Duty ≤ 1%, t
w
= 10 μs
⎯
100
⎯
ns
Total gate charge Q
g
⎯
27
⎯
Gate-source charge Q
gs
⎯
16
⎯
Gate-drain charge Q
gd
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 20 A
⎯
11
⎯
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
⎯ ⎯ ⎯ 20 A
Pulse drain reverse current (Note 1) I
DRP
⎯ ⎯ ⎯ 40 A
Forward voltage (diode) V
DSF
I
DR
= 20 A, V
GS
= 0 V ⎯ ⎯ −1.7
V
Reverse recovery time t
rr
⎯ 450 ⎯ ns
Reverse recovery charge Q
rr
I
DR
= 20 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/μs
⎯ 8.1 ⎯ μC
Marking
0 V
10 V
V
GS
V
DD
≈ 300 V
I
D
= 10 A V
OUT
50 Ω
R
L
=30Ω
Lot No.
K20A60U
Part No.
(or abbreviation code)
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
`G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
TK20A60U
2013-11-01
3
V
GS
= 10, 15 V
Tc = −55°C
8, 10
10
8
7
7.5
V
GS
= 5.5 V
6.5
6
7
7.5
6.5
6
0.01
1
100
10 0.1
0.1
1
0.1
100
10
0.1 100 10
25
100
1
1
0
10
2
4
8
40
20
12 16
6
8
10
5
I
D
= 20A
0
40
8
16
32
2
0 10
6 8
24
4
100
25 Tc = −55°C
0
40
8
24
16
32
100
50
20 30 40
0
20
4
12
8
16
1 0
5
2 3 4
I
D
– V
DS
Drain current I
D
(A)
Drain−source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Drain
−
source voltage V
DS
(V)
Common source
Tc = 25°C
Pulse test
I
D
– V
GS
Drain current I
D
(A)
Gate−source voltage V
GS
(V)
V
DS
– V
GS
Drain−source voltage V
DS
(V)
Gate
−
source voltage V
GS
(V)
⎪Y
fs
⎪ − I
D
Forward transfer admittance
⎪Y
fs
⎪ (S)
Drain current I
D
(A)
R
DS (ON)
− I
D
Drain−source ON-resistance
R
DS (ON)
(Ω)
Drain current I
D
(A)
Common source
Tc = 25°C
Pulse test
Common source
V
DS
= 20 V
Pulse test
Common source
V
DS
= 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
V
GS
= 5.5 V
P1-P3P4-P6

TK20A60U(Q,M)

Mfr. #:
Buy TK20A60U(Q,M)
Manufacturer:
Toshiba
Description:
MOSFET MOSFET DTMOS-II N-CH 600V, 20A
Lifecycle:
New from this manufacturer.
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