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TEST2600

P1-P3P4-P5
Document Number: 81562 For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
Rev. 1.7, 08-Sep-08 517
Silicon NPN Phototransistor, RoHS Compliant
TEST2600
Vishay Semiconductors
DESCRIPTION
TEST2600 is a silicon NPN phototransistor with high radiant
sensitivity in black, miniature, side view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (L x W x H in mm): 3.6 x 2.2 x 3.4
• High radiant sensitivity
• Daylight blocking filter matches with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ
1
= ± 30°, horizontal
• Package matches with IR emitter series TSSS2600
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Optical switches
• Counters and sorters
• Interrupters
• Tape and card readers
• Encoders
• Position sensors
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
amb
= 25 °C, unless otherwise specified
94 8673
PRODUCT SUMMARY
COMPONENT I
ca
(mA) ϕ (deg) λ
0.5
(nm)
TEST2600 2.5 ± 30 850 to 980
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEST2600 Bulk MOQ: 5000 pcs, 5000 pcs/bulk
Side view
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Total power dissipation T
amb
≤ 55 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature t ≤ 3 s, 2 mm frpm case T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire,
0.14 mm
2
R
thJA
450 K/W
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81562
518 Rev. 1.7, 08-Sep-08
TEST2600
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Note
T
amb
= 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
020406080
0
20
40
80
100
120
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
100
20907
60
10 30 50 70 90
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 1 mA V
(BR)CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 100 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
6pF
Collector light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
I
ca
12.5 mA
Angle of half sensitivity
horizontal ϕ
1
± 30 deg
vertical ϕ
2
± 60 deg
Wavelength of peak sensitivity λ
p
920 nm
Range of spectral bandwidth λ
0.5
850 to 980 nm
Collector emitter saturation voltage
E
e
= 1 mW/cm
2
, λ = 950 nm,
I
C
= 0.1 mA
V
CEsat
0.3 V
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
on
6µs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
off
5µs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω f
c
110 kHz
94 8249
20
I
CEO
- Collector Dark Current (nA)
100
40 60 80
T
amb
- Ambient Temperature (°C)
10
10
1
10
2
10
3
10
4
V
CE
= 10 V
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
Document Number: 81562 For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
Rev. 1.7, 08-Sep-08 519
TEST2600
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
94 8268
0.01 0.1 1
0.01
0.1
1
10
I - Collector Light Current (mA)
ca
E
e
- Irradiance (mW/cm )
2
10
V
CE
= 5V
= 950nm
λ
0.1 11 0
0.1
1
10
I - Collector Light Current (mA)
ca
V
CE
- Collector Ermitter (V)
100
94 8269
E
e
=1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
= 950nm
λ
0.1 1 10
0
4
8
12
16
20
C
CEO
- Collector Ermitter Capacitance (pF)
V
CE
- Collector Ermitter Voltage (V)
100
94 8247
f = 1 MHz
1612
840
94 8253
0
2
4
6
8
12
t
on
/t
off
- Turn-on/Turn-off Time (µs)
I
C
- Collector Current (mA)
10
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
700 800 900 1000
1100
94 8270
0
0.2
0.4
0.6
0.8
1.0
S ( ) - Relative Spectral Sensitivity
rel
λ
- Wavelength (nm)
λ
0.4 0.2 0 0.2 0.4
S - Relative Sensitivity
rel
0.6
94 8273
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
P1-P3P4-P5

TEST2600

Mfr. #:
Buy TEST2600
Manufacturer:
Vishay Semiconductors
Description:
Phototransistors 70V 100mW 920nm
Lifecycle:
New from this manufacturer.
Delivery:
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