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TIPL762A-S

P1-P3P4-P6
TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5. Figure 6.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
0·1 1·0 10
h
FE
- Typical DC Current Gain
1·0
10
100
TCP762AE
V
CE
= 5 V
T
C
= 125°C
T
C
= 25°C
T
C
= -65°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0 0·5 1·0 1·5 2·0 2·5
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
1·0
2·0
3·0
4·0
5·0
TCP762AH
I
C
= 1 A
I
C
= 2 A
I
C
= 4 A
I
C
= 6 A
T
C
= 25°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0 0·5 1·0 1·5 2·0 2·5
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
0
1·0
2·0
3·0
4·0
5·0
TCP762AI
I
C
= 1 A
I
C
= 2 A
I
C
= 4 A
I
C
= 6 A
T
C
= 100°C
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 1·8 2·0
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0·7
0·8
0·9
1·0
1·1
1·2
TCP762AJ
T
C
= 25°C
I
C
= 6 A
I
C
= 4 A
I
C
= 2 A
I
C
= 1 A
OBSOLETE
TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
5
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 7.
MAXIMUM SAFE OPERATING REGIONS
Figure 8.
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
T
C
- Case Temperature - °C
-80 -60 -40 -20 0 20 40 60 80 100 120 140
I
CES
- Collector Cut-off Current - µA
0·001
0·01
0·1
1·0
10
TCP762AF
TIPL762A
V
CE
= 1000 V
TIPL762
V
CE
= 850 V
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
1·0 10 100 1000
I
C
- Collector Current - A
0·01
0.1
1·0
10
100
SAP762AB
TIPL762
TIPL762A
t
p
= 100
µ
s
t
p
= 1 ms
t
p
= 10 ms
DC Operation
OBSOLETE
TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 9.
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
t
1
- Power Pulse Duration - s
10
-5
10
-4
10
-3
10
-2
10
-1
Z
θJC
/ R
θJC
- Normalised Transient Thermal Impedance
0·001
0·01
0·1
1·0
TCP762AG
t1
t2
duty cycle = t1/t2
Read time at end of t1,
T
J(max)
- T
C
= P
D(peak)
·
· R
θJC(max)
Z
θJC
R
θJC
( )
5%
10%
20%
50%
2%
0%
1%
OBSOLETE
P1-P3P4-P6

TIPL762A-S

Mfr. #:
Buy TIPL762A-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 1000V 6A NPN
Lifecycle:
New from this manufacturer.
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