VUO86-16NO7 Datasheet VUO86-16NO7 | P1-P3

VUO86-16NO7

3~ Rectifier Bridge

Standard Rectifier Module

K N DH A

Part number

VUO86-16NO7

Features / Advantages: Applications: Package:

● Package with DCB ceramic

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

● Diode for main rectification

● For three phase bridge configurations

● Supplies for DC power equipment

● Input rectifiers for PWM inverter

● Battery DC power supplies

● Field supply for DC motors

ECO-PAC1

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 9 mm

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

RRM

1600

I90

FSM

550

DAV

V

=

V

A

=

I

3~

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20130321aData according to IEC 60747and per semiconductor unless otherwise specified

VUO86-16NO7

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.14

R 0.9 K/W

R

min.

90

V

RSM

V

40T = 25°C

VJ

T = °C

VJ

mA1.5V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

105

P

tot

135 WT = 25°C

C

R K/W0.4

30

1600

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.48

T = 25°C

VJ

150

V

F0

V0.81T = °C

VJ

150

r

F

7.8

mΩ

V1.06T = °C

VJ

I = A

F

V

30

1.51

I = A

F

90

I = A

F

90

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

RRM

V1600

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

18

j

unction capacitance

V = V;400 T = 25°Cf = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T = °C

VJ

150

550

595

1.11

1.06

A

470

505

1.52

1.48

1600

DAV

d =rectangular ⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1700

IXYS reserves the right to change limits, conditions and dimensions.

20130321aData according to IEC 60747and per semiconductor unless otherwise specified

VUO86-16NO7

Ratings

XXX XX-XXXXX

YYCW Lot#

Made in Germany

Circuit Diagram

Part Number Date Code

Logo

Package

T

VJ

°C

M

D

Nm2

mounting torque

1.5

T

stg

°C125

storage temperature

-40

Weight g19

Symbol Definition typ. max.min.Conditions

virtual junction temperature

Unit

V V

t = 1 second

V

t = 1 minute

isolation voltage

mm

6.0

10.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

100 A

per terminal

150-40

terminal to terminal

ECO-PAC1

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

VUO86-16NO7 479608Box 25VUO86-16NO7Standard

2500

3000

ISOL

threshold voltage

V0.81

mΩ

V

0 max

R

0 max

slope resistance *

6.6

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Rectifier

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20130321aData according to IEC 60747and per semiconductor unless otherwise specified

VUO86-16NO7

VUO86-16NO7

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