MJ15002

© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 6
1 Publication Order Number:
MJ15001/D
MJ15001 (NPN),
MJ15002 (PNP)
Complementary Silicon
Power Transistors
The MJ15001 and MJ15002 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
High Safe Operating Area
For Low Distortion Complementary Designs
High DC Current Gain
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
140 Vdc
CollectorBase Voltage V
CBO
140 Vdc
EmitterBase Voltage V
EBO
5 Vdc
Collector Current Continuous I
C
15 Adc
Base Current Continuous I
B
5 Adc
Emitter Current Continuous I
E
20 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
200
1.14
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
0.875 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/16 from Case for v 10 secs
T
L
265 °C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping
ORDERING INFORMATION
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
TO204AA
(PbFree)
MJ15002G
MJ15001G TO204AA
(PbFree)
100 Units/Tray
100 Units/Tray
TO204AA (TO3)
CASE 107
STYLE 1
MARKING DIAGRAM
MJ1500x = Device Code
x = 1 or 2
G= PbFree Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
MJ1500xG
AYYWW
MEX
1
2
3
SCHEMATIC
1
BASE
EMITTER 2
CASE 3
1
BASE
EMITTER 2
CASE 3
PNP
NPN
MJ15001 (NPN), MJ15002 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(I
C
, = 200 mAdc, I
B
= 0)
V
CEO(sus)
140 Vdc
Collector Cutoff Current
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
I
CEX
100
2.0
mAdc
mAdc
Collector Cutoff Current
(V
CE
= 140 Vdc, I
B
= 0)
I
CEO
250
mAdc
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
I
EBO
100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1 s (nonrepetitive))
(V
CE
= 100 Vdc, t = 1 s (nonrepetitive))
I
S/b
5.0
0.5
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4 Adc, V
CE
= 2 Vdc)
h
FE
25 150
CollectorEmitter Saturation Voltage
(I
C
= 4 Adc, I
B
= 0.4 Adc)
V
CE(sat)
1.0 Vdc
BaseEmitter On Voltage
(I
C
= 4 Adc, V
CE
= 2 Vdc)
V
BE(on)
2.0 Vdc
DYNAMIC CHARACTERISTICS
CurrentGain — Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f
test
= 0.5 MHz)
f
T
2.0 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
1000 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
I
C
, COLLECTOR CURRENT (AMP)
5
Figure 1. ActiveRegion Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5 7 10 200
10
2
2 3 50 70 10020 30
7
200
1
3
0.5
0.2
0.7
0.3
T
C
= 25°C
T
J
= 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V
CEO
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T
J
(pk)
= 200°C; T
C
is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
MJ15001 (NPN), MJ15002 (PNP)
http://onsemi.com
3
f
T
, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (AMP)
0.7 1 2 3 5 107200.2 0.3 0.5
2
0.7 1 2 3 5 107200.2 0.3 0.5
Figure 2. Capacitances
I
C
, COLLECTOR CURRENT (AMP)
2.0
1.6
1.2
0.4
0.8
0
0.7 1 2 3 5 10720
I
C
, COLLECTOR CURRENT (AMP)V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. CurrentGain — Bandwidth Product
Figure 4. DC Current Gain
700
500
1000
3 5 10 1502
300
200
100
70
50
30
20
7
I
C
, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
10
20 30 7050 1001.5
9
8
10
0.3 0.5 10.2
4
3
2
1
0.7
MJ15002 (PNP)
0
35 1070.1 2
7
6
5
I
C
, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5
T
J
= 25°C
V
BE
@ V
CE
= 2 Vdc
V
CE(sat)
@ I
C
/I
B
= 10
V, VOLTAGE (VOLTS)
T
J
= 100°C
25°C
100°C
2.0
1.6
1.2
0.4
0.8
0
0.7 1 2 3 5 107200.2 0.3 0.5
T
J
= 100°C
25°C
h
FE
, DC CURRENT GAIN
V
CE
= 2 Vdc
T
J
= 25°C
V
CE
= 10 V
f
test
= 0.5 MHz
C
ib
MJ15001
(NPN)
T
J
= 25°C
MJ15001 (NPN)
MJ15002 (PNP)
h
FE
, DC CURRENT GAINV, VOLTAGE (VOLTS)
70
50
100
30
20
10
7
5
3
2
200
70
50
100
30
20
10
7
5
3
200
C, CAPACITANCE (pF)
C
ib
C
ob
C
ob
MJ15001 MJ15002
MJ15001 MJ15002
V
CE
= 2 Vdc
T
J
= 100°C
25°C
V
BE
@ V
CE
= 2 Vdc
T
J
= 25°C
100°C
V
CE(sat)
@ I
C
/I
B
= 10
T
J
= 100°C
25°C
TYPICAL CHARACTERISTICS

MJ15002

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 140V 15A TO-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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