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DG2616DN-T1-E4

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
Vishay Siliconix
DG2616, DG2617, DG2618
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Crosstalk measured between channels.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.5 or 1.4 V
e
Temp.
a
Limits
- 40 °C to 85 °C
Unit Min.
b
Typ.
c
Max.
b
Power Supply
Power Supply Range V+ 1.5 3.6 V
Power Supply Current I+
V+ = 3.6 V, V
IN
= 0 or V+, SHDN/EN = 0 V
Full
104 300
µA
V+ = 3.6 V, V
IN
= 0 or V+, SHDN/EN = V+
0.1 2
SPECIFICATIONS V+ = 3 V
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
www.vishay.com
5
Vishay Siliconix
DG2616, DG2617, DG2618
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
R
ON
vs. V
COM
and Supply Voltage
R
ON
vs. Analog Voltage and Temperature
Leakage Current vs. Temperature
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0 1 2 3 4 5
V+ = 4.2 V
V+ = 5.0 V
V+ = 2.0 V
V+ = 2.7 V
V+ = 3.0 V
V+ = 3.6 V
T = 25 °C
I
NO/NC
= 10 mA
V+ = 1.2 V
V+ = 1.5 V
V
CO
M
- Analog Voltage (V)
(Ω) ecnatsiseR-nO -
R
NO
0
1
2
3
4
5
6
7
8
9
10
V+ = 3.6 V, I
s
= 10 mA
+ 85 °C
+ 25 °C
- 40 °C
V
COM
- Analog Voltage (V)
(Ω) ecnat
s
i
se
R
-
n
O
-
R
N
O
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
1
10
100
1000
- 60 - 40 - 20 0 20 40 60 80 100
I
I
V+ = 3.6V
I
Temperature (°C)
)
A p
(
t
n e
r
r u
C e
g a k
a e L
COM(off)
NO(off)
COM(on)
R
ON
vs. Analog Voltage and Temperature
Supply Current vs. Temperature
Leakage vs. Analog Voltage
V
COM
- Analog Voltage (V)
(Ω) e c n a t s i s e R - n O -
R
N O
0
1
2
3
4
5
6
7
8
9
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V+ = 2.7 V, I
s
= 10 mA
+ 85 °C
+ 25 °C
- 40 °C
0
50
100
150
200
- 60 - 40 - 20 0 20 40 60
80 100
V+ = 3.6 V
Temperature (°C)
) A µ( t n e r r u C y l p p u S - + I
- 500
- 400
- 300
- 200
- 100
0
100
200
300
400
500
0.0 0.6 1.2 1.8 2.4 3.0 3.6
I
COM(on)
I
COM(off)
V+ = 3.6 V
V
COM
- Analog Voltage (V)
) A p ( t n e r r u C e g a k a e L
www.vishay.com
6
Document Number: 74411
S-82149-Rev. B, 08-Sep-08
Vishay Siliconix
DG2616, DG2617, DG2618
TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Switching Time vs. Temperature
Switching Threshold vs. Supply Voltage
Temperature (°C)
t
ON
, t
OFF
- Switching Time (ns)
0
5
10
15
20
25
30
35
40
- 60 - 40 - 20 0 20 40 60 80 100
t
ON
V+ = 2.7 V
t
ON
V+ = 3.6 V
t
OFF
V+ = 2.7 V
t
OFF
V+ = 3.6 V
0.0
0.5
1.0
1.5
2.0
1 2 3 4 5 6
V+ - Supply Voltage (V)
hT
g
ni
hcti
w
S
-
)V( dlohser
V
T
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Charge Injection vs. Analog Voltage
Frequency (Hz)
LOSS, OIRR, X
TALK
(dB)
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
10
V+ = 2.7 V
R
L
= 50
Ω
OIRR
Loss
XTalk
100k 1M 10M 100M 1G
- 10
- 5
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V+ = 2.0 V
V+ = 3.6 V
V+ = 2.7 V
)
C
p
( n o i t c e j n I e g r a h C - Q
V
COM
- Analog Voltage (V)
P1-P3P4-P6P7-P9P10-P10

DG2616DN-T1-E4

Mfr. #:
Buy DG2616DN-T1-E4
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG2723DN-T1-E4
Lifecycle:
New from this manufacturer.
Delivery:
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