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IRG7PH35UD1PBF

P1-P3P4-P6P7-P9P10-P10
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
E
G
n-channel
C
V
CES
= 1200V
I
NOMINAL
= 20A
T
J(max)
= 150°C
V
CE(on)
typ. = 1.9V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low V
CE(on)
, low switching losses
and Ultra-low V
F
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
TO-247AC
IRG7PH35UD1PbF
TO-247AD
IRG7PH35UD1-EP
Features
• Low V
CE (ON)
trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• Ultra-Low V
F
Diode
• 1300Vpk Repetitive Transient Capacity
• 100% of the Parts Tested for I
LM
• Positive V
CE (ON)
Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
1
www.irf.com © 2013 International Rectifier April 24, 2013
G
C
E
G
G
C
E
G
IRG7PH35UD1PbF
IRG7PH35UD1-EP
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200
V
(BR) Transient
Repetitive Trans ient Collector-to-Emitter Voltage
1300
I
C
@ T
C
= 25°C
Continuous Collector Current 50
I
C
@ T
C
= 100°C
Continuous Collector Current 25
I
NOMINAL
Nominal Current 20
I
CM
Pulse Collector Current, V
GE
=15V
150 A
I
LM
Clamped Inductive Load Current, V
GE
=20V
80
I
F
@ T
C
= 25°C
Diode Continous Forward Current 50
I
F
@ T
C
= 100°C
Diode Continous Forward Current 25
I
FM
Diode Maximum Forward Current
80
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 179 W
P
D
@ T
C
= 100°C
Maximum Power Dissipation 71
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ
JC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
––– ––– 0.70
R
θ
JC
(Diode) Thermal Resistance Junction-to-Case-(each Diode)
––– ––– 1.35 °C/W
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 –––
V
Base part number Package Type Orderable Part Number
Form
Quantity
IRG7PH35UD1PbF TO-247AC Tube 25 IRG7PH35UD1PbF
IRG7PH35UD1-EP
TO-247AD
Tube
IRG7PH35UD1-EP
Standard Pack
www.irf.com © 2013 International Rectifier April 24, 2013
2
IRG7PH35UD1PbF/IRG7PH35UD1-EP
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
approximately 90°C.
FBSOA operating conditions only.
V
GE
= 0V, T
J
= 75°C, PW ≤ 10μs.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 100μA
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.9 2.2 V I
C
= 20A, V
GE
= 15V, T
J
= 25°C
—2.3— I
C
= 20A, V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V V
CE
= V
GE
, I
C
= 600μA
gfe Forward Transconductance — 22 — S V
CE
= 50V, I
C
= 20A, PW = 30μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 100 μAV
GE
= 0V, V
CE
= 1200V
— 120 — V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 1.15 1.26 V I
F
= 20A
—1.08— I
F
= 20A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 85 130 I
C
= 20A
Q
ge
Gate-to-Emitter Charge (turn-on) — 15 20 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 35 50 V
CC
= 600V
I
C
= 20A, V
CC
= 600V, V
GE
= 15V
E
off
Turn-Off Switching Loss — 620 850 μJR
G
= 10
Ω
, L = 200μH,L
S
= 150nH, T
J
= 25°C
Energy losses include tail
t
d(off)
Turn-Off delay time — 160 180 ns I
C
= 20A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time — 80 105 R
G
= 10
Ω
, L = 200μH,L
S
= 150nH, T
J
= 25°C
I
C
= 20A, V
CC
= 600V, V
GE
=15V
E
off
Turn-Off Switching Loss — 1120 — μJR
G
= 10
Ω
, L = 200μH,L
S
= 150nH, T
J
= 150°C
Energy losses include tail
t
d(off)
Turn-Off delay time — 190 — ns I
C
= 20A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time — 210 — R
G
= 10Ω, L = 200μH,L
S
= 150nH, T
J
= 150°C
C
ies
Input Capacitance — 1940 — pF V
GE
= 0V
C
oes
Output Capacitance — 120 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 40 — f = 1.0Mhz
T
J
= 150°C, I
C
= 80A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 960V, Vp =1200V
Rg = 10
Ω
, V
GE
= +20V to 0V
Conditions
www.irf.com © 2013 International Rectifier April 24, 2013
3
IRG7PH35UD1PbF/IRG7PH35UD1-EP
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 30μs
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 30μs
Fig. 4 - Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
10 100 1000 10000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
Fig. 3 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
0 2 4 6 8 10
V
CE
(V)
0
10
20
30
40
50
60
70
80
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
0 2 4 6 8 10
V
CE
(V)
0
10
20
30
40
50
60
70
80
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
25 50 75 100 125 150
T
J
, Temperature (°C)
0.5
0.6
0.7
0.8
0.9
1.0
V
G
E
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
N
o
r
m
a
l
i
z
e
d
)
I
C
= 600μA
25 50 75 100 125 150
T
C
(°C)
0
10
20
30
40
50
I
C
(
A
)
25 50 75 100 125 150
T
C
(°C)
0
25
50
75
100
125
150
175
200
P
t
o
t
(
W
)
P1-P3P4-P6P7-P9P10-P10

IRG7PH35UD1PBF

Mfr. #:
Buy IRG7PH35UD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
Lifecycle:
New from this manufacturer.
Delivery:
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