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BAV21-TR

P1-P3P4-P4
BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
1
Document Number: 85543
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon epitaxial planar diodes
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• General purposes
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BAV17 V
RRM
= 25 V BAV17-TR or BAV17-TAP BAV17 Single diode Tape and reel/ammopack
BAV18 V
RRM
= 60 V BAV18-TR or BAV18-TAP BAV18 Single diode Tape and reel/ammopack
BAV19 V
RRM
= 120 V BAV19-TR or BAV19-TAP BAV19 Single diode Tape and reel/ammopack
BAV20 V
RRM
= 200 V BAV20-TR or BAV20-TAP BAV20 Single diode Tape and reel/ammopack
BAV21 V
RRM
= 250 V BAV21-TR or BAV21-TAP BAV21 Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitve peak reverse voltage
BAV17 V
RRM
25 V
BAV18 V
RRM
60 V
BAV19 V
RRM
120 V
BAV20 V
RRM
200 V
BAV21 V
RRM
250 V
Reverse voltage
BAV17 V
R
20 V
BAV18 V
R
50 V
BAV19 V
R
100 V
BAV20 V
R
150 V
BAV21 V
R
200 V
Forward continuous current I
F
250 mA
Peak forward surge current t
p
= 1 s, T
j
= 25 °C I
FSM
1A
Forward peak current f = 50 Hz I
FRM
625 mA
Power dissipation P
tot
500 mW
BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
2
Document Number: 85543
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, T
L
= constant R
thJA
300 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 175 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1V
Reverse current
V
R
= 20 V BAV17 I
R
100 nA
V
R
= 50 V BAV18 I
R
100 nA
V
R
= 100 V BAV19 I
R
100 nA
V
R
= 150 V BAV20 I
R
100 nA
V
R
= 200 V BAV21 I
R
100 nA
T
j
= 100 °C, V
R
= 20 V BAV17 I
R
15 μA
T
j
= 100 °C, V
R
= 50 V BAV18 I
R
15 μA
T
j
= 100 °C, V
R
= 100 V BAV19 I
R
15 μA
T
j
= 100 °C, V
R
= 150 V BAV20 I
R
15 μA
T
j
= 100 °C, V
R
= 200 V BAV21 I
R
15 μA
Breakdown voltage
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAV17 V
(BR)
25 V
BAV18 V
(BR)
60 V
BAV19 V
(BR)
120 V
BAV20 V
(BR)
200 V
BAV21 V
(BR)
250 V
Diode capacitance V
R
= 0 V, f = 1 MHz, C
D
1.5 pF
Differential forward resistance I
F
= 10 mA r
f
5
Reverse recovery time
I
F
= I
R
= 30 mA, i
R
= 3 mA
R
L
= 100
t
rr
50 ns
0 40 80 120 160
0.01
0.1
1
10
1000
I-Reverse Current (µA)
R
T
j
-Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R
= V
RRM
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
V
F
-Forward Voltage (V)
2.0
94 9085
Scattering Limit
T
j
= 25 °C
BAV17, BAV18, BAV19, BAV20, BAV21
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 06-May-13
3
Document Number: 85543
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Differential Forward Resistance vs. Forward Current
PACKAGE DIMENSIONS in millimeters (inches): DO-35
0.1 1 10
1
10
100
1000
r - Differential Forward Resistance ( )
f
I
F
- Forward Current (mA)
100
94 9089
Ω
T
j
= 25 °C
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
P1-P3P4-P4

BAV21-TR

Mfr. #:
Buy BAV21-TR
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 250V If/250mA T/R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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