OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI7446BDP-T1-E3

P1-P3P4-P6
Vishay Siliconix
Si7446BDP
Document Number: 72554
S09-1819-Rev. E, 14-Sep-09
www.vishay.com
1
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.0075 at V
GS
= 10 V 19
0.010 at V
GS
= 4.5 V 17
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK
®
SO-8
Bottom View
Ordering Information:
Si7446BDP-T1-E3 (Lead (Pb)-free)
Si7446BDP-T1-GE3 (Lead-(Pb)-free and Halogen-free)
N-Channel MOSFE
T
G
D
S
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150°C)
a
T
A
= 25°C
I
D
19 12
A
T
A
= 70°C 15 9
Pulsed Drain Current I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
4.0 1.6
Maximum Power Dissipation
a
T
A
= 25°C
P
D
4.8 1.9
W
T
A
= 70°C 3.0 1.2
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t ≤ 10 s
R
thJA
21 26
°C/W
Steady State 55 65
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.6 2.0
www.vishay.com
2
Document Number: 72554
S09-1819-Rev. E, 14-Sep-09
Vishay Siliconix
Si7446BDP
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 1.0 3.0 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ±20 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V 1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55°C 5
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V 40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 19 A 0.0064 0.0075
Ω
V
GS
= 4.5 V, I
D
= 17 A 0.0084 0.010
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 19 A 60 S
Diode Forward Voltage
a
V
SD
I
S
= 4.0 A, V
GS
= 0 V 0.75 1.2 V
Dynamic
b
Input Capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
3076
pFOutput Capacitance C
oss
657
Reverse Transfer Capacitance C
rss
248
Total Gate Charge Q
g
V
DS
= 15 V, V
GS
= 5.0 V, I
D
= 19 A
22 33
nCGate-Source Charge Q
gs
8.3
Gate-Drain Charge Q
gd
4.7
Gate Resistance R
g
0.4 0.8 1.2 Ω
Tur n - O n D e l ay Time t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
20 30
ns
Rise Time t
r
16 25
Turn-Off Delay Time t
d(off)
120 180
Fall Time t
f
43 65
Source-Drain Reverse Recovery
Time
t
rr
I
F
= 2.3 A, dI/dt = 100 A/µs 40 80
Output Characteristics
0
10
20
30
40
50
012345
V
GS
= 10 V thru 4 V
2V
3
V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
Transfer Characteristics
0
10
20
30
40
50
60
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
Document Number: 72554
S09-1819-Rev. E, 14-Sep-09
www.vishay.com
3
Vishay Siliconix
Si7446BDP
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.003
0.006
0.009
0.012
0.015
0 1020304050
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5
V
0
1
2
3
4
5
6
0 6 12 18 24 30
V
DS
= 15 V
I
D
= 19 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
SD
- Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
60
10
1
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
C
rss
0
800
1600
2400
3200
4000
048 12 16 20
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 19 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.000
0.004
0.008
0.012
0.016
0.020
0246810
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 19 A
P1-P3P4-P6

SI7446BDP-T1-E3

Mfr. #:
Buy SI7446BDP-T1-E3
Manufacturer:
Vishay
Description:
MOSFET N-CH 30V 12A PPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet