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T3160N14TOFVTXPSA1
P1-P3
P4-P6
P7-P9
P10-P10
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T3160N
IFBIP D AEC / 2010-07-13, H.Sandmann
A
20/10
7/10
Seite/page
Tc
DC
1
80°
120
°
90
°
60°
θ
= 30°
0
200
0
400
0
600
0
800
0
1
000
0
1
200
0
0
1
0
0
02
0
0
03
0
0
04
0
0
05
0
0
06
0
0
07
0
0
08
0
0
0
I
TAV
[A
]
P
TA
V
[W
]
0°
0
18
0°
Durchlassverlustleistung /
On-state power loss
P
TA
V
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
DC
18
0°
12
0°
90
°
60°
θ
=
30°
20
40
60
80
100
120
140
0
100
0
2
00
0
30
00
4
00
0
50
00
6
00
0
70
00
800
0
I
TA
V
[A]
T
C
[°
C
]
0°
0
18
0°
Höchstzulässige Geh
äusetemperatur / Maximum allow
able case temperature T
C
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Beidseitige Kühlung / T
wo-sided cooling
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T3160N
IFBIP D AEC / 2010-07-13, H.Sandmann
A
20/10
8/10
Seite/page
Steuerkennlinie
Zündverzug
0,1
1
10
100
10
100
1000
10000
i
G
[mA
]
v
G
[V]
T
vj
=
+125°C
T
vj
=
-40 °C
T
vj
=
+25°C
a
b
c
Steuercharakteristik v
G
= f (i
G
) mit Zündbereichen für V
D
= 12 V
Gate characteristic v
G
= f (i
G
) with triggering area for V
D
= 12 V
Höchstzulässige Spitzens
teuerverlustleistung / Maximum rat
ed peak gate power dissipation P
GM
= f (t
g
) :
a - 20W / 10ms b - 40W / 1ms c - 60W / 0,5ms
1000
10000
100000
1
10
100
-di/dt [A
/µs]
Q
r
[µAs
]
i
TM
=
5000A
100A
200A
500A
1000A
2000A
Sperrverzögerungsla
dung / Recovered charge Q
r
= f(di/dt)
T
vj
= T
vjmax
, v
R
≤
0,5 V
RRM
, V
RM
= 0,8 V
RRM
Parameter: Durchlassstro
m / On-state current i
TM
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T3160N
IFBIP D AEC / 2010-07-13, H.Sandmann
A
20/10
9/10
Seite/page
0-
50V
0,33 V
R
RM
0,67 VRR
M
0
10
20
30
40
50
60
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
A
n
z
ah
l
Pu
lse b
ei 50Hz
S
in
us H
alb
w
ellen
Nu
m
b
er o
f
pu
ls
es f
or 50H
z sinu
s
o
i
d
al hal
f
w
aves
I
T(
O
V)
M
[k
A]
Typische Abhängi
gkeit des Grenzstromes I
T(OV)M
von der Anza
hl für eine Folge v
on Sinus
Halbwellen bei 50H
z. Parameter: Rück
wärtsspannung V
RM
Typical depende
ncy of maximum ov
erload on-state current I
T(OV)M
as a number of a s
equence of
sinusoidal half waves at 50Hz. Parameter:
peak reverse voltage V
RM
I
T(OV)M
= f (pulses
, V
RM
) ; T
vj
= T
vjmax
P1-P3
P4-P6
P7-P9
P10-P10
T3160N14TOFVTXPSA1
Mfr. #:
Buy T3160N14TOFVTXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 1800V 7000A DO200AE
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
TNT
EMS
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