FDFMJ2P023Z Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
©2007 Fairchild Semiconductor Corporation
FDFM2P023Z Rev.B
www.fairchildsemi.com
4
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
012345
0
3
6
9
12
V
GS
= -4.5V
V
GS
= -3V
V
GS
= -1.8V
V
GS
= -2.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
GS
= -2V
V
GS
= -1.5V
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
036912
0.5
1.0
1.5
2.0
2.5
V
GS
= -1.8V
V
GS
= -3V
V
GS
= -1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT(A)
V
GS
= -2.5V
V
GS
= -2V
V
GS
= -4.5V
N orm al iz ed On - R e s i s t a n c e
vs Drain Current and Gate Voltage
Fi g ure 3 . N o rma l iz e d On - Res ist a nc e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -2.9A
V
GS
= -4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
1.52.02.53.03.54.04.5
0
100
200
300
400
500
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -2.9A
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
O n -R es is t an ce v s G at e to
Source Voltage
Figure 5. Transfer Characteristics
0123
0
3
6
9
12
V
DD
= -3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-I
S
, REVERSE DRAIN CURRENT (A)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra in D io d e
Forward Voltage vs Source Current
