CS51221
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (continued) (–40°C < T
A
< 85°C; –40°C < T
J
< 125°C; 3.0 V < V
C
< 15 V; 4.7 V < V
CC
< 15 V;
R
T
= 12 k; C
T
= 390 pF; unless otherwise specified.)
Characteristic UnitMaxTypMinTest Conditions
GATE Driver
High Saturation Voltage V
C
– GATE, V
C
= 10 V, I
SOURCE
= 200 mA – 1.5 2.0 V
Low Saturation Voltage GATE – PGND, I
SINK
= 200 mA – 1.2 1.5 V
High Voltage Clamp – 11 13.5 16 V
Output Current 1.0 nF Load. Note 3 – 1.0 1.25 A
Output UVL Leakage GATE = 0 V – 1.0 50 µA
Rise Time 1.0 nF Load, V
C
= 20 V, 1.0 V < GATE < 9.0 V – 60 100 ns
Fall Time 1.0 nF Load, V
C
= 20 V, 9.0 V < GATE < 1.0 V – 25 50 ns
Max Gate Voltage During UVL/Sleep I
GATE
= 500 µA 0.4 0.7 1.0 V
Feed Forward (FF)
Discharge Voltage
I
FF
= 2.0 mA – 0.3 0.7 V
Discharge Current FF = 1.0 V 2.0 16 30 mA
FF to GATE Delay – 50 75 125 ns
Overcurrent Protection
Overcurrent Threshold
I
SET
= 0.5 V, Ramp I
SENSE
0.475 0.5 0.525 V
I
SENSE
to GATE Delay – 50 90 125 ns
External Voltage Monitors
Overvoltage Threshold
OV Increasing 1.9 2.0 2.1 V
Overvoltage Hysteresis Current OV = 2.15 V 10 12.5 15 µA
Undervoltage Threshold UV Increasing 0.95 1.0 1.05 V
Undervoltage Hysteresis – 25 75 125 mV
Soft Start (SS)
Charge Current
SS = 2.0 V 40 50 70 µA
Discharge Current SS = 2.0 V 4.0 5.0 7.0 µA
Charge Voltage – 2.8 3.0 3.4 V
Discharge Voltage – 0.25 0.3 0.35 V
Soft Start Clamp Offset FF = 1.25 V 1.15 1.25 1.35 V
Soft Start Fault Voltage OV = 2.15 V or LV = 0.85 V – 0.1 0.2 V
Blanking
Blanking Time – 50 150 250 ns
SS Blanking Disable Threshold V
FB
< 1.0 2.8 3.0 3.3 V
COMP Blanking Disable Threshold V
FB
< 1.0, SS > 3.0 V 2.8 3.0 3.3 V
Thermal Shutdown
Thermal Shutdown
Note 3 125 150 180 °C
Thermal Hysteresis Note 3 5.0 10 15 °C
3. Guaranteed by design, not 100% tested in production.
