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SI4823DY-T1-E3

P1-P3P4-P6P7-P9P10-P11
www.vishay.com
4
Document Number: 64715
S10-1051-Rev. C, 03-May-10
Vishay Siliconix
Si4823DY
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
10
0.0 1.5 3.0 4.5 6.0 7.5 9.0
I
D
= 3.3 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 16 V
V
DS
=10V
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
10
T
J
= 25 °C
0.5
0.7
0.9
1.1
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
V (V)
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.7
0.9
1.1
1.3
1.5
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 2.6 A
V
GS
= 10 V, I
D
= 3.3 A
0.00
0.04
0.0
8
0.12
0.16
0.20
036912
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
= 3.3 A
0
30
50
10
20
Power (W)
Time (s)
40
1100.10.010.001
Document Number: 64715
S10-1051-Rev. C, 03-May-10
www.vishay.com
5
Vishay Siliconix
Si4823DY
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS Limited
1ms
10 ms
100 ms
1s
10 s
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Current Derating*
Power Derating, Junction-to-Ambient
0
1
2
3
4
5
0 255075100125150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
0.00
0.25
0.50
0.75
1.00
1.25
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
Power Derating, Junction-to-Case
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 64715
S10-1051-Rev. C, 03-May-10
Vishay Siliconix
Si4823DY
MOSFET TYPICAL CHARACTERISTICS T
A
= 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 120 C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
P1-P3P4-P6P7-P9P10-P11

SI4823DY-T1-E3

Mfr. #:
Buy SI4823DY-T1-E3
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 4.1A 8-SOIC
Lifecycle:
New from this manufacturer.
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