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Document Number: 64715
S10-1051-Rev. C, 03-May-10
Vishay Siliconix
Si4823DY
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Based on T
C
= 25 °C.
e. Maximum under steady state conditions is 110 °C/W.
f. Maximum under steady state conditions is 115 °C/W.
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (MOSFET)
b, e
R
thJA
60 71.5
°C/W
Maximum Junction-to-Foot (Drain) (MOSFET)
R
thJF
35 45
Maximum Junction-to-Ambient (Schottky)
b, f
R
thJA
63 78
Maximum Junction-to-Foot (Drain) (Schottky)
R
thJF
39 47
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 µA - 20 V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= - 250 µA
- 20
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
3
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA - 0.6 - 1.5 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 20 V, V
GS
= 0 V - 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C - 10
On-State Drain Current
a
I
D(on)
V
DS
≤ 5 V, V
GS
= - 4.5 V - 15 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 3.3 A 0.090 0.108
Ω
V
GS
= - 2.5 V, I
D
= - 2.6 A 0.140 0.175
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 3.3 A 6 S
Dynamic
b
Input Capacitance C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
330 660
pFOutput Capacitance C
oss
80 160
Reverse Transfer Capacitance C
rss
57 114
Total Gate Charge Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 3.3 A 8 12
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 3.3 A
46
Gate-Source Charge Q
gs
0.8
Gate-Drain Charge Q
gd
1.4
Gate Resistance R
g
f = 1 MHz 1.2 6 12 Ω
Tur n-O n Del ay Tim e t
d(on)
V
DD
= - 10 V, R
L
= 3.8 Ω
I
D
≅ - 2.6 A, V
GEN
= - 10 V, R
g
= 1 Ω
36
ns
Rise Time t
r
10 20
Turn-Off DelayTime t
d(off)
16 24
Fall Time t
f
815
Tur n-O n Del ay Tim e t
d(on)
V
DD
= - 10 V, R
L
= 3.8 Ω
I
D
≅ - 2.6 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
18 27
Rise Time t
r
40 60
Turn-Off DelayTime t
d(off)
18 27
Fall Time t
f
10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - 6.2
A
Pulse Diode Forward Current I
SM
- 15
Body Diode Voltage V
SD
I
S
= - 2.6 A, V
GS
= 0 V - 0.8 - 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= - 2.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
23 35 ns
Body Diode Reverse Recovery Charge Q
rr
14 21 nC
Reverse Recovery Fall Time t
a
11
ns
Reverse Recovery Rise Time t
b
12
