CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
t
rr
μs
C
J
pF
T
J
°C
T
STG
°C
Document Number: DS_D1411068 Version: R15
A
Maximum RMS voltage
Weight: 0.06 g (approximately)
Maximum average forward rectified current 1
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
Maximum repetitive peak reverse voltage
50
S1M UNIT
DO-214AC (SMA)
Case: DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
Polarity: Indicated by cathode band
S1G S1JS1D
Non-repetitive peak reverse avalanche
energy at 25°C, I
AS
=1A, L=10mH
1.5
S1A - S1M
1A, 50V - 1000V Surface Mount Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
S1K
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Maximum DC blocking voltage
Typical reverse recovery time (Note 2)
SYMBOL S1A S1B
Taiwan Semiconductor
40 30
1.1
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
12
30
85
Typical junction capacitance (Note 3)
Operating junction temperature range
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Typical thermal resistance
R
θJL
R
θJA
E
RSM
5
- 55 to +175
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 1: Pulse test with PW=300μs, 1% duty cycle
V
I
R
μA
mJ
27
75
Storage temperature range
- 55 to +175
°C/W
