FCX1047A
Document number: DS33076 Rev. 3 - 2
4 of 7
www.diodes.com
January 2015
© Diodes Incorporated
FCX1047A
Product Line o
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
35 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CES
35 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
10 — — V
I
C
= 10mA
Collector-Emitter Breakdown Voltage
BV
CEV
35 — — V
I
C
= 100µA, V
EB
= 1V
Emitter-Base Breakdown Voltage
BV
EBO
7 — — V
I
E
= 100µA
Collector Cutoff Current
I
CBO
— 0.3 10 nA
V
CB
= 20V
Collector Cutoff Current
I
CES
— 0.3 10 nA
V
CES
= 20V
Emitter Cutoff Current
I
EBO
— 0.3 10 nA
V
EB
= 5.6V
DC Current Transfer Static Ratio (Note 10)
h
FE
280
290
300
200
200
60
430
440
450
350
330
110
1,200
—
I
C
= 10mA, V
CE
= 2V
I
C
= 0.5A, V
CE
= 2V
I
C
= 1A, V
CE
=2V
I
C
= 4A, V
CE
= 2V
I
C
= 5A, V
CE
= 2V
I
C
= 20A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
25
50
140
160
220
40
70
200
240
350
mV
I
C
= 0.5A, I
B
= 10mA
I
C
= 1A, I
B
= 10mA
I
C
= 3A, I
B
= 15mA
I
C
= 4A, I
B
= 50mA
I
C
= 5A, I
B
= 25mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
— 920 1,000 mV
I
C
= 4A, I
B
= 50mA
Base-Emitter Turn-on Voltage (Note 10)
V
BE(on)
— 860 950 mV
I
C
= 4A, V
CE
= 2V
Transitional Frequency
f
T
— 150 — MHz
I
C
= 50mA, V
CE
= 10V,
f = 50MHz
Output Capacitance
C
obo
— 85 — pF
V
CB
= 10V, f = 1MHz,
Switching Time
t
on
—
130
—
ns
V
CC
= 10V, I
C
= 4A,
I
B1
= I
B2
= ±40mA
t
off
230 ns
Note: 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
