MBRD630CTT4G

© Semiconductor Components Industries, LLC, 2016
April, 2017 − Rev. 14
1 Publication Order Number:
MBRD620CT/D
MBRD620CT,
NRVBD620VCT, SBRV620CT
Series
Switch-mode
Power Rectifiers
DPAK−3 Surface Mount Package
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
Extremely Fast Switching
Extremely Low Forward Drop
Platinum Barrier with Avalanche Guardrings
NRVBD and SBRV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Ratings:
Machine Model = C
Human Body Model = 3B
SCHOTTKY BARRIER
RECTIFIERS
6.0 AMPERES, 20 − 60 VOLTS
1
3
4
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
www.onsemi.com
Y = Year
WW = Work Week
B6x0T = Device Code
x = 2, 3, 4, 5, or 6
G = Pb−Free Package
DPAK
CASE 369C
MARKING DIAGRAM
YWW
B
6x0TG
MBRD620CT, NRVBD620VCT, SBRV620CT Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MBRD/NRVBD/SBRV
Unit
620CT 630CT 640CT 650CT 660CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 50 60 V
Average Rectified Forward Current
T
C
= 130°C (Rated V
R
)
Per Diode
Per Device
I
F(AV)
3
6
A
Peak Repetitive Forward Current,
T
C
= 130°C (Rated V
R
, Square Wave, 20 kHz)
Per Diode
I
FRM
6
A
Nonrepetitive Peak Surge Current − (Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
I
FSM
75 A
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
I
RRM
1 A
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Storage Temperature T
stg
−65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS PER DIODE
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case
R
q
JC
6 °C/W
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
80 °C/W
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
i
F
= 3 Amps, T
C
= 25°C
i
F
= 3 Amps, T
C
= 125°C
i
F
= 6 Amps, T
C
= 25°C
i
F
= 6 Amps, T
C
= 125°C
V
F
0.7
0.65
0.9
0.85
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= 25°C)
(Rated dc Voltage, T
C
= 125°C)
i
R
0.1
15
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
MBRD620CT, NRVBD620VCT, SBRV620CT Series
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage, Per Leg
Figure 2. Typical Reverse Current,* Per Leg
Figure 3. Average Power Dissipation, Per Leg
1.21.00
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
100
10
V
R
, REVERSE VOLTAGE (VOLTS)
40 700
0.1
0.0001
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
1.00
10
8.0
6.0
4.0
2.0
0
2.0
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
P
F(AV)
, AVERAGE POWER DISSIPATION (WATTS)
1.0
0.40.2 0.6 0.8
50 6010 20 30
10
1000
3.0 4.0 5.0 6.0 7.0 10
0.1
1.4
8.0 9.0
9.0
7.0
5.0
3.0
1.0
, REVERSE CURRENT (mA)
R
1.0
0.01
T
C
= 25°C
150°C
125°C
75°C
T
J
= 150°C
I
PK
/I
AV
= 20
SINE
WAVE
SQUARE
WAVE
dc
10
5
T
J
= 175°C
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selection
s
can be estimated from these curves if V
R
is sufficient below rated V
R
.
150°C
75°C
25°C
11
12
13
14
0.2
0.3
0.5
0.7
2.0
3.0
5.0
7.0
70
50
30
20
175°C
100
0.001
125°C

MBRD630CTT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 6A 30V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union