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IXTH30N50L2

P1-P3P4-P5
© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 500 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 30 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
60 A
I
AR
T
C
= 25°C 30 A
E
AR
T
C
= 25°C 50 mJ
E
AS
1.5 J
P
D
T
C
= 25°C 400 W
T
J
-55 to +150 °C
T
JM
+150 °C
T
stg
-55 to +150 °C
T
L
1.6mm (0.063in) from case for 10s 300 °C
T
SOLD
Plastic body for 10s 260 °C
M
d
Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-3P 5.5 g
TO-268 5.0 g
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 2.5 4.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
50 μA
V
GS
= 0V T
J
= 125°C 300 μA
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 200 mΩ
G = Gate D = Drain
S = Source TAB = Drain
Linear L2
TM
Power
MOSFET with extended
FBSOA
IXTH30N50L2
IXTQ30N50L2
IXTT30N50L2
DS99957A (04/08)
V
DSS
= 500V
I
D25
= 30A
R
DS(on)
≤≤
≤≤
≤ 200m
ΩΩ
ΩΩ
Ω
TO-247 (IXTH)
Features
z
Designed for linear operation
z
International standard packages
z
Unclamped Inductive Switching
(UIS) rated.
z
Molding epoxies meet UL 94 V-0
flammability classification
z
Integrated gate resistor for easy
paralleling
z
Guaranteed FBSOA at 75°C
Applications
z
Solid state circuit breakers
z
Soft start controls
z
Linear amplifiers
z
Programmable loads
z
Current regulators
TO-3P (IXTQ)
TO-268 (IXTT)
G
S
D
S
G
(TAB)
(TAB)
(TAB)
D
D
D
D
D
O
G
O
O
S
w
O
w
R
Gi
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 9 12 15 S
C
iss
8100 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 530 pF
C
rss
115 pF
R
Gi
Integrated gate input resistor 3.5 Ω
t
d(on)
35 ns
t
r
117 ns
t
d(off)
94 ns
t
f
40 ns
Q
g(on)
240 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
58 nC
Q
gd
135 nC
R
thJC
0.31 °C/W
R
thCS
(TO-247, TO-3P) 0.25 °C/W
Safe Operating Area Specification
Symbol Test Conditions Min. Typ. Max.
SOA V
DS
= 400V, I
D
= 0.5A, T
C
= 75°C, tp = 2s 200 W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0V 30 A
I
SM
Repetitive, pulse width limited by T
JM
120 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.5 V
t
rr
I
F
= I
S
, -di/dt = 100A/μs, V
R
= 100V 500 ns
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 0Ω (External)
TO-3P (IXTQ) Outline
e
∅ P
1 2 3
TO-268 (IXTT) Outline
© 2008 IXYS CORPORATION, All rights reserved
Fig. 1. Output Characteristics
@ T
J
= 25ºC
0
3
6
9
12
15
18
21
24
27
30
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
12V
10V
9V
5V
6V
8
V
7V
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 3 6 9 12 15 18 21 24 27 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
14V
12V
7V
6V
8V
9V
10V
Fig. 3. Output Characteristics
@ T
J
= 125ºC
0
3
6
9
12
15
18
21
24
27
30
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
12V
10V
9V
5V
7V
6V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 15A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 30A
I
D
= 15A
Fig. 5. R
DS(on)
Normalized to I
D
= 15A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 10203040506070
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
35
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
P1-P3P4-P5

IXTH30N50L2

Mfr. #:
Buy IXTH30N50L2
Manufacturer:
Littelfuse
Description:
MOSFET 30.0 Amps 500V 0.002 Rds
Lifecycle:
New from this manufacturer.
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