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NP1800SAMCT3G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2010
December, 2010 − Rev. 2
1 Publication Order Number:
NP0640SAMC/D
NPMC Series
Ultra Low Capacitance
TSPD
The NPMC series of Low Capacitance Thyristor Surge Protection
Devices (TSPD) protect sensitive electronic equipment from transient
overvoltage conditions. Due to their ultra low off−state capacitance
(C
o
), they offer minimal signal distortion for high speed equipment
such as DSL and T1/E1 circuits. The low nominal offstate capacitance
translates into the extremely low differential capacitance offering
superb linearity with applied voltage or frequency.
The NPMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
Features
• Ultra Low − Micro Capacitance
• Low Leakage (Transparent)
• High Surge Current Capabilities
• Precise Turn on Voltages
• Low Voltage Overshoot
• These are Pb−Free Devices
Typical Applications
• xDSL Central Office and Customer Premise
• T1/E1
• Other Broadband High Speed Data Transmission Equipment
ELECTRICAL PARAMETERS
Device
V
DRM
V
(BO)
V
T
I
DRM
I
(BO)
I
T
I
H
V V V
A
mA A mA
NP0640SxMCT3G 58 77 4 5 800 2.2 150
NP0720SxMCT3G 65 88 4 5 800 2.2 150
NP0900SxMCT3G 75 98 4 5 800 2.2 150
NP1100SxMCT3G 90 130 4 5 800 2.2 150
NP1300SxMCT3G 120 160 4 5 800 2.2 150
NP1500SxMCT3G 140 180 4 5 800 2.2 150
NP1800SxMCT3G 170 220 4 5 800 2.2 150
NP2100SxMCT3G 180 240 4 5 800 2.2 150
NP2300SxMCT3G 190 260 4 5 800 2.2 150
NP2600SxMCT3G 220 300 4 5 800 2.2 150
NP3100SxMCT3G 275 350 4 5 800 2.2 150
NP3500SxMCT3G 320 400 4 5 800 2.2 150
G = indicates leadfree, RoHS compliant
*
Recognized Components
ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 − 350 VOLTS
TR
SMB
JEDEC DO−214AA
CASE 403C
A = Assembly Location
Y = Year
WW = Work Week
xxxx = Specific Device Code
(NPxxx0SxMC)
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
xxxxMG
G
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Device Package Shipping
†
ORDERING INFORMATION
NPxxx0SxMCT3G SMB
(Pb−Free)
2500 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NPMC Series
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2
TEL−COM STANDARDS
Specification
Waveform x = series ratings
Unit
Voltage s) Current s)
A B C
GR−1089−CORE 2x10 2x10 150 250 500
A(pk)
TIA−968−A 10x160 10x160 90 150 200
GR−1089−CORE 10x360 10x360 75 125 175
TIA−968−A 10x560 10x560 50 100 150
ITU−T K.20/21 10x700 5x310 75 100 200
GR−1089−CORE 10x1000 10x1000 50 80 100
SURGE RATINGS
Characteristics Symbol A B C Unit
Nominal Pulse
Surge Short Circuit Current Non – Repetitive
Double Exponential Decay Waveform (Notes 1, 2 and 3)
2 x 10 mSec
8 x 20 mSec
10 x 160 mSec
10 x 360 mSec
10 x 560 mSec
10 x 700 mSec
10 x 1000 mSec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
I
PPS5
I
PPS6
I
PPS7
150
150
90
75
50
75
50
250
250
150
125
100
100
80
500
400
200
150
150
200
100
A(pk)
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
3. Nominal values may not represent the maximum capability of a device.
CAPACITANCE
Characteristics Symbol
Max
Unit
A B C
(f=1.0 MHz, 1.0 V
rms
, 2 Vdc bias)
(C
o
Apx 45% @ 50 V) NP0640SxMCT3G
NP0720SxMCT3G
NP0900SxMCT3G
NP1100SxMCT3G
NP1300SxMCT3G
NP1500SxMCT3G
NP1800SxMCT3G
NP2100SxMCT3G
NP2300SxMCT3G
NP2600SxMCT3G
NP3100SxMCT3G
NP3500SxMCT3G
C
o
23
23
23
23
23
23
23
23
23
23
23
23
29
29
29
29
29
29
29
29
29
29
29
29
33
33
33
33
33
33
33
33
33
33
33
33
pF
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Symbol
Rating Value Unit
V
DRM
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
(Stresses exceeding Maximum Ratings may damage
the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended
Operating Conditions is not implied. Extended
exposure to stresses above the Recommended
Operating Conditions may affect device reliability.)
NP0640SxMCT3G ±58
V
NP0720SxMCT3G ±65
NP0900SxMCT3G ±75
NP1100SxMCT3G ±90
NP1300SxMCT3G ±120
NP1500SxMCT3G ±140
NP1800SxMCT3G ±170
NP2100SxMCT3G ±180
NP2300SxMCT3G ±190
NP2600SxMCT3G ±220
NP3100SxMCT3G ±275
NP3500SxMCT3G ±320
NPMC Series
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3
ELECTRICAL CHARACTERISTICS TABLE (T
A
= 25°C unless otherwise noted)
Symbol
Rating Min Typ Max Unit
V
(BO)
Breakover voltage: The maximum voltage across the device in or at the
breakdown region. (Note 4)
VDC = 1000 V, dv/dt = 100 V/ms
NP0640SxMCT3G ±77
V
NP0720SxMCT3G ±88
NP0900SxMCT3G ±98
NP1100SxMCT3G ±130
NP1300SxMCT3G ±160
NP1500SxMCT3G ±180
NP1800SxMCT3G ±220
NP2100SxMCT3G ±240
NP2300SxMCT3G ±260
NP2600SxMCT3G ±300
NP3100SxMCT3G ±350
NP3500SxMCT3G ±400
I
(BO)
Breakover Current: The instantaneous current flowing at the breakover voltage. 800 mA
I
H
Holding Current: Minimum current required to maintain the device in the on−state. (Notes 5, 6) 150 mA
I
DRM
Off−state Current: The dc value of current that results from the applica-
tion of the off−state voltage
V
D
= 50 V 2 mA
V
D
= V
DRM
5
V
T
On−state Voltage: The voltage across the device in the on−state condition.
I
T
= 2.2 A (pk), PW = 300 ms, DC = 2%
4 V
di/dt Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
±500
A/ms
4. Electrical parameters are based on pulsed test methods.
5. Measured under pulsed conditions to reduce heating
6. Allow cooling before testing second polarity.
THERMAL CHARACTERISTICS
Symbol Rating Value Unit
T
STG
Storage Temperature Range −65 to +150 °C
T
J
Junction Temperature −40 to +150 °C
R
0JA
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
90 °C/W
P1-P3P4-P6P7-P7

NP1800SAMCT3G

Mfr. #:
Buy NP1800SAMCT3G
Manufacturer:
ON Semiconductor
Description:
Thyristor Surge Protection Devices (TSPD) LOW CAP TSPD SURGE DEVICE
Lifecycle:
New from this manufacturer.
Delivery:
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