PMEG4030ER_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 7 of 13
NXP Semiconductors
PMEG4030ER
3 A low V
F
MEGA Schottky barrier rectifier
T
j
= 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ =1
T
j
= 125 °C
(1) δ =1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, standard footprint
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
I
F(AV)
(A)
0.0 5.04.02.0 3.01.0
006aab661
1.0
0.5
1.5
2.0
P
F(AV)
(W)
0.0
(1)
(2)
(3)
(4)
V
R
(V)
0403010 20
006aab656
0.4
0.5
0.3
0.2
0.1
0.6
0.7
P
R(AV)
(W)
0.0
(1)
(2)
(3)
(4)
T
amb
(°C)
0 50 100 150 1751257525
006aab662
1.5
3.0
4.5
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
T
amb
(°C)
0 50 100 150 1751257525
006aab663
1.5
3.0
4.5
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
