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IXFQ90N20X3

P1-P3P4-P6
© 2018 IXYS CORPORATION, All Rights Reserved
DS100802D(4/18)
IXFP90N20X3
IXFQ90N20X3
IXFH90N20X3
V
DSS
= 200V
I
D25
= 90A
R
DS(on)
12.8m
Features
International Standard Packages
Low R
DS(ON)
and Q
G
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 250μA 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 1.5mA 2.5 4.5 V
I
GSS
V
GS
= 20V, V
DS
= 0V 100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 5 A
T
J
= 125C 300 A
R
DS(on)
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1 10.5 12.8 m
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 150C 200 V
V
DGR
T
J
= 25C to 150C, R
GS
= 1M 200 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C90A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
220 A
I
A
T
C
= 25C45A
E
AS
T
C
= 25C 1.5 J
dv/dt I
S
I
DM
, V
DD
V
DSS
, T
J
150°C 20 V/ns
P
D
T
C
= 25C 390 W
T
J
-55 ... +150 C
T
JM
150 C
T
stg
-55 ... +150 C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13 / 10 Nm/lb.in
Weight TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
N-Channel Enhancement Mode
Avalanche Rated
X3-Class HiPerFET
TM
Power MOSFET
G
D
S
TO-220AB (IXFP)
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
S
D (Tab)
D
G
D
S
D (Tab)
D (Tab)
TO-3P (IXFQ)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP90N20X3 IXFQ90N20X3
IXFH90N20X3
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 90 A
I
SM
Repetitive, pulse Width Limited by T
JM
360 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
95 ns
Q
RM
360 nC
I
RM
7.6 A
I
F
= 45A, -di/dt = 100A/μs
V
R
= 100V
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1 40 67 S
R
Gi
Gate Input Resistance 1.4
C
iss
5420 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 930 pF
C
rss
4 pF
C
o(er)
420 pF
C
o(tr)
1300 pF
t
d(on)
22 ns
t
r
26 ns
t
d(off)
62 ns
t
f
13 ns
Q
g(on)
78 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
23 nC
Q
gd
22 nC
R
thJC
0.32 C/W
R
thCS
TO-220 0.50 C/W
TO-247 & TO-3P 0.25 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
© 2018 IXYS CORPORATION, All Rights Reserved
IXFP90N20X3 IXFQ90N20X3
IXFH90N20X3
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
80
90
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
7V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
10
20
30
40
50
60
70
80
90
00.511.522.53
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
4V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 45A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 90A
I
D
= 45A
Fig. 5. R
DS(on)
Normalized to I
D
= 45A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 50 100 150 200 250 300 350 400
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
5V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
P1-P3P4-P6

IXFQ90N20X3

Mfr. #:
Buy IXFQ90N20X3
Manufacturer:
Littelfuse
Description:
MOSFET DISCMSFT NCHULTRJNCTN X3CLASS
Lifecycle:
New from this manufacturer.
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