62mmC-SerienModulmitTrench/FeldstoppIGBT4undEmitterControlledDiode
62mmC-seriesmodulewithtrench/fieldstopIGBT4andEmitterControlleddiode
1
TechnischeInformation/TechnicalInformation
FF450R12KE4
IGBT-Module
IGBT-modules
preparedby:MK
approvedby:WR
dateofpublication:2013-11-04
revision:2.2
VorläufigeDaten
PreliminaryDataIGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
T
vj
= 25°C V
CES
1200 V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
T
C
= 100°C, T
vj max
= 175°C
T
C
= 25°C, T
vj max
= 175°C
I
C nom
I
C
450
520
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
900 A
Gesamt-Verlustleistung
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 175°C P
tot
2400 W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
V
GES
+/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
I
C
= 450 A, V
GE
= 15 V
I
C
= 450 A, V
GE
= 15 V
I
C
= 450 A, V
GE
= 15 V
V
CE sat
1,75
2,00
2,05
2,15
V
V
V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
I
C
= 17,0 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
5,2 5,8 6,4 V
Gateladung
Gatecharge
V
GE
= -15 V ... +15 V Q
G
3,70 µC
InternerGatewiderstand
Internalgateresistor
T
vj
= 25°C R
Gint
1,9 Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
28,0 nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
1,10 nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C I
CES
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
I
C
= 450 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,0 Ω
t
d on
0,20
0,25
0,27
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
I
C
= 450 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,0 Ω
t
r
0,045
0,05
0,055
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
I
C
= 450 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,0 Ω
t
d off
0,50
0,60
0,62
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
I
C
= 450 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,0 Ω
t
f
0,10
0,16
0,18
µs
µs
µs
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
I
C
= 450 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, di/dt = 9000 A/µs (T
vj
= 150°C)
R
Gon
= 1,0 Ω
E
on
19,0
30,0
36,0
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
I
C
= 450 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, du/dt = 4000 V/µs (T
vj
= 150°C)
R
Goff
= 1,0 Ω
E
off
33,0
50,0
56,0
mJ
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
Kurzschlußverhalten
SCdata
V
GE
≤ 15 V, V
CC
= 800 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
1800
A
T
vj
= 150°C
t
P
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT R
thJC
0,062 K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,031 K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 150 °C