OMO ElectronicOMO Electronic
Expand menu
0 Cart

IRLP3034PBF

P1-P3P4-P6P7-P8
04/21/09
www.irf.com 1
HEXFET
®
Power MOSFET
S
D
G
PD - 96230
IRLP3034PbF
GDS
Gate Drain Source
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R
DS(ON)
at 4.5V V
GS
l Superior R*Q at 4.5V V
GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
TO-247AC
IRLP3034PbF
V
DSS
40V
R
DS
(
on
)
typ.
1.4m
max.
1.7m
I
D
(
Silicon Limited
)
327A
I
D (Package Limited)
195A
S
D
G
D
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Ener
g
y
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJC
Junction-to-Case
–––
0.44
R
θCS
Case-to-Sink, Flat, Greased Surface
0.24 –––
R
θJA
Junction-to-Ambient
––– 40
See Fig. 14, 15, 22a, 22b,
A
°C
°C/W
224
341
4.6
±20
2.3
10lbf in (1.1N m)
-55 to + 175
300
Max.
327
232
1308
195
IRLP3034PbF
2 www.irf.com
S
D
G
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.013mH
R
G
= 25Ω, I
AS
= 195A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤ 195A, di/dt ≤ 841A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
s
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 40 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
e Temp. Coefficient ––– 0.04 ––– V/°C
––– 1.4 1.7
––– 1.6 2.0
V
GS(th)
Gate Threshold Volta
g
e 1.0 ––– 2.5 V
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 100
Gate-to-Source Reverse Leaka
g
e ––– ––– -100
R
G(int)
Internal Gate Resistance ––– 2.1 –––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
s
g
fs Forward Transconductance 286 ––– ––– S
Q
g
Total Gate Char
g
e ––– 108 162
Q
gs
Gate-to-Source Char
g
e ––– 29 –––
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– 54 –––
Q
sync
Total Gate Char
g
e Sync. (Q
g
- Q
gd
)
––– 54 –––
t
d(on)
Turn-On Delay Time ––– 65 –––
t
r
Rise Time ––– 827 –––
t
d(off)
Turn-Off Delay Time ––– 97 –––
t
f
Fall Time ––– 355 –––
C
iss
Input Capacitance ––– 10315 –––
C
oss
Output Capacitance ––– 1980 –––
C
rss
Reverse Transfer Capacitance ––– 935 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 2378 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 2986 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Unit
s
I
S
Continuous Source Current ––– –––
(Body Diode)
I
SM
Pulsed Source Current ––– –––
(Body Diode)
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 39 –––
T
J
= 25°C V
R
= 34V,
––– 41 –––
T
J
= 125°C I
F
= 195A
Q
rr
Reverse Recovery Char
g
e ––– 39 –––
T
J
= 25°C
di
/
dt = 100A
/
µs
––– 46 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.7 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is ne
g
li
g
ible (turn-on is dominated by LS+LD)
V
GS
= -20V
showing the
V
DS
= 20V
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 195A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
ns
V
GS
= 0V, V
DS
= 0V to 32V
MOSFET symbol
T
J
= 25°C, I
S
= 195A, V
GS
= 0V
integral reverse
p-n junction diode.
V
GS
= 20V
nC
µA
nA
nC
ns
R
DS(on)
Static Drain-to-Source On-Resistance
pF
A
327
1308
V
GS
= 4.5V, I
D
= 172A
m
Ω
I
D
= 195A
R
G
= 2.1Ω
V
GS
= 4.5V
V
DD
= 26V
I
D
= 185A, V
DS
=0V, V
GS
= 4.5V
Conditions
V
DS
= 10V, I
D
= 195A
I
D
= 185A
IRLP3034PbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
1 2 3 4 5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 25V
≤
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 195A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120 140
Q
G
,
Total Gate Charge (nC)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
V
DS
= 20V
I
D
= 185A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
10000
100000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM 2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM 2.5V
≤
60µs PULSE WIDTH
Tj = 175°C
2.5V
P1-P3P4-P6P7-P8

IRLP3034PBF

Mfr. #:
Buy IRLP3034PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 40V 327A 1.7mOhm 108nC TO221
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet