August 1998 2 Rev 1.000
NXP Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
Collector cut-off current
1
V
BE
= 0 V; V
CE
= V
CESMmax
- - 1.0 mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
; - - 2.0 mA
T
j
= 125 ˚C
I
CBO
Collector cut-off current
1
V
CBO
= V
CESMmax
(700V) - - 0.1 mA
I
CEO
V
CEO
= V
CEOMmax
(400V) - - 0.1 mA
I
EBO
Emitter cut-off current V
EB
= 7 V; I
C
= 0 A - - 0.1 mA
V
CEOsust
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 10 mA; 400 - - V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage I
C
= 3.0 A; I
B
= 0.6 A - 0.25 1.0 V
V
BEsat
Base-emitter saturation voltage I
C
= 3.0 A; I
B
= 0.6 A - 0.97 1.5 V
h
FE
DC current gain I
C
= 1 mA; V
CE
= 5 V 10 17 32
h
FE
I
C
= 0.5 A; V
CE
= 5 V 12 20 32
h
FEsat
DC current gain I
C
= 2 A; V
CE
= 5 V 13.5 16 20
I
C
= 3 A; V
CE
= 5 V - 12.5 -
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
Con
= 2.5 A; I
Bon
= -I
Boff
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
t
on
Turn-on time 0.52 0.6 µs
t
s
Turn-off storage time 2.7 3.2 µs
t
f
Turn-off fall time 0.3 0.43 µs
Switching times (inductive load) I
Con
= 2 A; I
Bon
= 0.4 A; L
B
= 1 µH;
-V
BB
= 5 V
t
s
Turn-off storage time 1.2 1.33 µs
t
f
Turn-off fall time 33 80 ns
Switching times (inductive load) I
Con
= 2 A; I
Bon
= 0.4 A; L
B
= 1 µH;
-V
BB
= 5 V; T
j
= 100 ˚C
t
s
Turn-off storage time - 1.8 µs
t
f
Turn-off fall time - 200 ns
1 Measured with half sine-wave voltage (curve tracer).
