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TK3R1E04PL,S1X

P1-P3P4-P6P7-P9
TK3R1E04PL
4
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(Note 5)
Symbol
I
DRP
(t = 100 µs)
V
DSF
t
rr
Q
rr
Test Condition
I
DR
= 100 A, V
GS
= 0 V
V
R
= 20 V, I
DR
= 25 A,
V
GS
= 0 V, -dI
DR
/dt = 100 A/µs
Min
Typ.
50
50
Max
400
-1.5
Unit
A
V
ns
nC
Note 5: Ensure that the channel temperature does not exceed 175 .
7.
7.
7.
7. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
2016-09-20
Rev.1.0
©2016 Toshiba Corporation
TK3R1E04PL
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
I
D
D
D
D
- V
- V
- V
- V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 I
I
I
I
D
D
D
D
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 V
V
V
V
DS
DS
DS
DS
- V
- V
- V
- V
GS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- I
- I
- I
- I
D
D
D
D
Fig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 I
I
I
I
DR
DR
DR
DR
- V
- V
- V
- V
DS
DS
DS
DS
2016-09-20
Rev.1.0
©2016 Toshiba Corporation
TK3R1E04PL
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 V
V
V
V
(BR)DSS
(BR)DSS
(BR)DSS
(BR)DSS
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 V
V
V
V
th
th
th
th
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 R
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
- T
- T
- T
- T
a
a
a
a
Fig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 Capacitance - V
Capacitance - V
Capacitance - V
Capacitance - V
DS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.12
8.12
8.12
8.12 Q
Q
Q
Q
oss
oss
oss
oss
- V
- V
- V
- V
DS
DS
DS
DS
2016-09-20
Rev.1.0
©2016 Toshiba Corporation
P1-P3P4-P6P7-P9

TK3R1E04PL,S1X

Mfr. #:
Buy TK3R1E04PL,S1X
Manufacturer:
Toshiba
Description:
MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W
Lifecycle:
New from this manufacturer.
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