RJK0651DPB Preliminary
R07DS0076EJ0200 Rev.2.00 Page 2 of 6
Apr 09, 2013
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60 — — V I
D
= 10 mA, V
GS
= 0 V
Gate to source leak current I
GSS
— — 0.1 A V
GS
= 20 V, V
DS
= 0 V
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 60 V, V
GS
= 0 V
Gate to source cutoff voltage V
GS(off)
1.2 — 2.5 V V
DS
= 10 V, I
D
= 1 mA
R
DS(on)
— 11 14 m I
D
= 12.5 A, V
GS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
— 13 18 m I
D
= 12.5 A, V
GS
= 4.5 V
Note4
Forward transfer admittance |y
fs
| — 40 — S I
D
= 12.5 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 2030 — pF
Output capacitance Coss — 250 — pF
Reverse transfer capacitance Crss — 100 — pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
Gate Resistance Rg — 0.7 —
Total gate charge Qg — 15 — nC
Gate to source charge Qgs — 6.7 — nC
Gate to drain charge Qgd — 3.7 — nC
V
DD
= 25 V, V
GS
= 4.5 V,
I
D
= 25 A
Turn-on delay time t
d(on)
— 8.4 — ns
Rise time t
r
— 4.4 — ns
Turn-off delay time t
d(off)
— 42 — ns
Fall time t
f
— 6.8 — ns
V
GS
= 10 V, I
D
= 12.5 A,
V
DD
30 V, R
L
= 2.4 ,
Rg = 4.7
Body–drain diode forward voltage V
DF
— 0.83 1.1 V I
F
= 25 A, V
GS
= 0 V
Note4
Body–drain diode reverse recovery
time
t
rr
— 32 — ns
I
F
= 25 A, V
GS
= 0 V
di
F
/ dt = 100 A/ s
Notes: 4. Pulse test
