G3SBA20-M3, G3SBA60-M3, G3SBA80-M3
www.vishay.com
Vishay General Semiconductor
Revision: 05-Aug-15
1
Document Number: 89304
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
RMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for monitor, TV, printer, switching mode power supply,
adapter, audio equipment, and home appliances
applications.
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
PRIMARY CHARACTERISTICS
Package GBU
I
F(AV)
4 A
V
RRM
200 V, 600 V, 800 V
I
FSM
80 A
I
R
5 μA
V
F
at I
F
= 2.0 A 1.0 V
T
J
max. 150 °C
Diode variations In-line
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL G3SBA20 G3SBA60 G3SBA80 UNIT
Maximum repetive peak reverse voltage V
RRM
200 600 800 V
Maximum RMS voltage V
RWM
140 420 560 V
Maximum DC blocking voltage V
DC
200 600 800 V
Maximum average forward rectified
output current at
T
C
= 100 °C
(1)
I
F(AV)
4.0
A
T
A
= 25 °C
(2)
2.3
Peak forward surge current single sine-wave
superimposed on rated load
I
FSM
80 A
Rating for fusing (t < 8.3 ms) I
2
t27A
2
s
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL G3SBA20 G3SBA60 G3SBA80 UNIT
Maximum instantaneous forward voltage per diode 2.0 A V
F
1.00 V
Maximum DC reverse current at rated DC
blocking voltage per diode
T
J
= 25 °C
I
R
5.0
μA
T
J
= 125 °C 400
