Characteristics TXDVxx12
2/7 Doc ID 18272 Rev 2
1 Characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180° conduction angle) T
c
= 90 °C 12 A
V
DRM
V
RRM
Repetitive peak off-state voltage
TXDV812
T
j
= 125 °C
800 V
TXDV1212 1200
I
TSM
Non repetitive surge peak on-state current
t
p
= 2.5 ms
T
j
= 25 °C
170
At
p
= 8.3 ms 125
t
p
= 10 ms 120
I
2
tI
2
t value for fusing t
p
= 10 ms 72 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 500 mA dI
G
/dt = 1 A/µs
F = 50 Hz 100 A/µs
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
INS(RMS)
(1)
Insulation rms voltage 2500 V
1. A1, A2, gate terminals to case for 1 minute
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
Value Unit
TXDV812 TXDV1212
I
GT
V
D
= 12 V DC, R
L
= 33 Ω
I-II-III MAX. 100 mA
V
GT
I-II-III MAX. 1.5 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 110 °C I-II-III MIN. 0.2 V
t
gt
V
D
= V
DRM
I
G
= 500 mA dI
G
/dt = 3 A/µs I-II-III TYP. 2.5 µs
I
L
I
G
= 1.2 x I
GT
I-III
TYP.
100
mA
II 200
I
H
(1)
I
T
= 500 mA Gate open MAX. 100 mA
dV/dt
(1)
Linear slope up to:
V
D
= 67% V
DRM
Gate open
T
j
= 125 °C MIN. 2 kV/µs
(dI/dt)c
(1)
(dV/dt)c = 10 V/µs T
j
= 110 °C MIN. 42.5 30 A/ms
V
TM
(1)
I
TM
= 17 A t
p
= 380 µs MAX. 1.95 V
V
to
(1)
Threshold voltage MAX. 1.21 V
R
d
(1)
Dynamic resistance MAX. 40 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
0.01
mA
T
j
= 110 °C 2 5
1. For either polarity of electrode A
2
voltage with reference to electrode A
1
.
