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MCC170-14IO1

P1-P3P4-P4
© 2000 IXYS All rights reserved
1 - 4
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
1300 1200 MCC 170-12io1
1500 1400 MCC 170-14io1
1700 1600 MCC 170-16io1
1900 1800 MCC 170-18io1
Symbol Test Conditions Maximum Ratings
I
TRMS
T
VJ
= T
VJM
350 A
I
TAVM
T
C
= 85°C; 180° sine 203 A
I
TSM
, I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz) 5400 A
V
R
= 0 t = 8.3 ms (60 Hz) 5800 A
T
VJ
= T
VJM
t = 10 ms (50 Hz) 5000 A
V
R
= 0 t = 8.3 ms (60 Hz) 5500 A
òi
2
dt T
VJ
= 45°C t = 10 ms (50 Hz) 146 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz) 140 000 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz) 125 000 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz) 126 000 A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 660 A 100 A/ms
f =50 Hz, t
P
=200 ms
V
D
= 2/3 V
DRM
I
G
= 1 A, non repetitive, I
T
= I
TAVM
500 A/ms
di
G
/dt = 1 A/ms
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000 V/ms
R
GK
= ¥; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
= 30 ms 120 W
I
T
= I
TAVM
t
P
= 500 ms60W
P
GAV
20 W
V
RGM
10 V
T
VJ
-40...+130 °C
T
VJM
130 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
Weight Typical including screws 750 g
Features
●
International standard package
●
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered E 72873
●
Keyed gate/cathode twin pins
Applications
●
Motor control, softstarter
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Solid state switches
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
I
TRMS
= 2x 350 A
I
TAVM
= 2x 203 A
V
RRM
= 1200-1800 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
MCC 170
Thyristor Modules
Thyristor/Diode Modules
1
2
3
7
6
5
4
3671 542
© 2000 IXYS All rights reserved
2 - 4
Symbol Test Conditions Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
40 mA
V
T
, V
F
I
T
, I
F
= 600 A; T
VJ
= 25°C 1.65 V
V
T0
For power-loss calculations only (T
VJ
= 130°C) 0.8 V
r
T
1mW
V
GT
V
D
= 6 V; T
VJ
= 25°C2V
T
VJ
= -40°C3V
I
GT
V
D
= 6 V; T
VJ
= 25°C 150 mA
T
VJ
= -40°C 220 mA
V
GD
T
VJ
= T
VJM
;V
D
= 2/3 V
DRM
0.25 V
I
GD
T
VJ
= T
VJM
;V
D
= 2/3 V
DRM
10 mA
I
L
T
VJ
= 25°C; t
P
= 30 ms; V
D
= 6 V 200 mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/ms
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
= ¥ 150 mA
t
gd
T
VJ
= 25°C; V
D
= 1/2 V
DRM
2 ms
I
G
= 1 A; di
G
/dt = 1 A/ms
t
q
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200 ms; -di/dt = 10 A/ms typ. 200 ms
V
R
= 100 V; dv/dt = 50 V/ms; V
D
= 2/3 V
DRM
Q
S
T
VJ
= 125°C; I
T
, I
F
= 300 A; -di/dt = 50 A/ms 550 mC
I
RM
235 A
R
thJC
per thyristor (diode); DC current 0.164 K/W
per module other values 0.082 K/W
R
thJK
per thyristor (diode); DC current see Fig. 8/9 0.204 K/W
per module 0.102 K/W
d
S
Creeping distance on surface 12.7 mm
d
A
Creepage distance in air 9.6 mm
a Maximum allowable acceleration 50 m/s
2
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1
MCC 170
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
0.01 0.1 1 10
1
10
100
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
I
G
V
G
A
A
I
G
1: I
GT
, T
VJ
= 140 C
2: I
GT
, T
VJ
= 25 C
3: I
GT
, T
VJ
= -40 C
µs
t
gd
V
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
I
GD
, T
VJ
= 140 C
4
2
1
5
6
Limit
typ.
T
VJ
= 25 C
3
0.01 0.1 1 10
1
10
100
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
I
G
V
G
A
A
I
G
1: I
GT
, T
VJ
= 130 C
2: I
GT
, T
VJ
= 25 C
3: I
GT
, T
VJ
= -40 C
µs
t
gd
V
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
I
GD
, T
VJ
= 130 C
4
2
1
5
6
Limit
typ.
T
VJ
= 25 C
3
Dimensions in mm (1 mm = 0.0394")
M8x20
© 2000 IXYS All rights reserved
3 - 4
I
TAVM
/I
FAVM
I
dAVM
P
tot
T
A
T
A
T
C
s
t
ms
t
0.001 0.01 0.1 1
0
1000
2000
3000
4000
5000
6000
110
10
4
10
5
10
6
A
2
s
0 25 50 75 100 125 150
0
100
200
300
400
I
TSM
A
A
°C
I
TAVM
I
FAVM
0 2550751001251500 100 200 300
0
100
200
300
400
W
P
tot
A
°C
0 25 50 75 100 125 1500 200 400 600
0
500
1000
1500
2000
°C
I
2
dt
80 % V
RRM
T
VJ
= 45°C
50 Hz
T
VJ
= 130°C
T
VJ
= 130°C
T
VJ
= 45°C
R
thKA
K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
A
W
R
thKA
K/W
0.3
0.1
0.15
0.2
0.06
0.08
0.04
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
B6
Circuit
3xMCC170
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4 òi
2
dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
MCC 170
P1-P3P4-P4

MCC170-14IO1

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MOD THYRISTOR DUAL 1400V Y1-CU
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