Product Standards
MOS FET
SK8603160L
Electrical Characteristics Ta = 25 C 3 C
Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
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Static Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 30 V
A
Gate-source Leakage Current IGSS
VGS =
16 V, VDS = 0 V 10
A
Zero Gate Voltage Drain Current IDSS 10 VDS = 30 V, VGS = 0 V
Gate-source Threshold Voltage Vth ID = 3.35 mA, VDS = 10 V 1.3
Drain-source On-state Resistance
RDS(on)1
ID = 17 A, VGS = 10 V
3
4.3
V
2.5 3.3
m
Dynamic Characteristics
Parameter Symbol Conditions Min Typ Max
RDS(on)2
ID = 17 A, VGS = 4.5 V 3.3
Unit
Input Capacitance Ciss
VDS = 10 V, VGS = 0 V
f = 1 MHz
2 800 3 920
pFOutput Capacitance Coss 330 462
Reverse Transfer Capacitance Crss 230 368
ns
Rise Time
*1
tr 12
Turn-on Delay Time
*1
td(on)
VDD = 15 V, VGS = 0 to 10 V
ID = 17 A
13
52
ns
Fall Time
*1
tf 8
Turn-off Delay Time
*1
td(off)
VDD = 15 V, VGS = 10 to 0 V
ID = 17 A
Total Gate Charge Qg
VDD = 15 V, VGS = 0 to 4.5 V
ID = 17 A
22
nCGate to Source Charge Qgs 7
Gate to Drain Charge Qgd 9
Gate resistance rg f = 5 MHz 1.2 3
Body Diode Characteristic
Parameter Symbol Conditions Min Typ Max Unit
0.8 1.2 VDiode Forward Voltage VSD IS = 17 A, VGS = 0 V
