OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STW10NK80Z

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
This is information on a product in full production.
March 2012 Doc ID 8911 Rev 7 1/17
17
STP10NK80Z, STP10NK80ZFP,
STW10NK80Z
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™
Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeability
Applications
■ Switching application
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
Pw
STP10NK80Z 800V <0.90Ω 9A 160 W
STP10NK80ZFP 800V <0.90Ω 9A 40 W
STW10NK80Z 800V <0.90Ω 9A 160 W
TO-220
TO-220FP
TO-247
1
2
3
TAB
1
2
3
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Part number Marking Package Packaging
STP10NK80Z P10NK80Z TO-220 Tube
STP10NK80ZFP P10NK80ZFP TO-220FP Tube
STW10NK80Z W10NK80Z TO-247 Tube
www.st.com
Contents STP10NK80Z, STP10NK80ZFP, STW10NK80Z
2/17 Doc ID 8911 Rev 7
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STP10NK80Z, STP10NK80ZFP, STW10NK80Z Electrical ratings
Doc ID 8911 Rev 7 3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/ TO-247 TO-220FP
V
DSS
Drain-source voltage (V
GS
= 0) 800 V
V
DGR
Drain-gate voltage (R
GS
= 20kΩ)800V
V
GS
Gate-source voltage ± 30V
I
D
Drain current (continuous) at T
C
= 25°C 9
9
(1)
1. Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
=100°C 6
6
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 36
36
(1)
A
P
TOT
Total dissipation at T
C
= 25°C 160 40 W
Derating factor 1.28 0.32W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4kV
dv/dt
(3)
3.I
SD
≤ 9 A, di/dt ≤ 200 A/µs,V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
Peak diode recovery voltage slope 4.5 V/ns
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 TO-220FP TO-247
R
thj-case
Thermal resistance junction-case Max 0.78 3.1 0.78 °C/W
R
thj-a
Thermal resistance junction-ambient Max 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
9A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
290 mJ
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STW10NK80Z

Mfr. #:
Buy STW10NK80Z
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet