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NTP30N06LG

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1 Publication Order Number:
NTP30N06L/D
NTP30N06L, NTB30N06L
Power MOSFET
30 Amps, 60 Volts, Logic Level,
N−Channel TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GS
"15
"20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
30
15
90
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
88.2
0.59
W
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc, L = 0.3 mH
I
L(pk)
= 26 A, V
DS
= 60 Vdc)
E
AS
101 mJ
Thermal Resistance, Junction−to−Case
R
q
JC
1.7 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
30 AMPERES, 60 VOLTS
R
DS(on)
= 46 mW
N−Channel
D
S
G
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NTx30N06L = Device Code
x = P or B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
TO−220
CASE 221A
STYLE 5
1
2
3
4
NTx30N06LG
AYWW
1
Gate
3
Sourc
e
4
Drain
2
Drain
NTx
30N06LG
AYWW
1
Gate
3
Sourc
e
4
Drain
2
Drain
D
2
PAK
CASE 418B
STYLE 2
MARKING
DIAGRAMS
1
2
3
4
http://onsemi.com
NTP30N06L, NTB30N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
71.8
69
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.7
4.8
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 1)
(V
GS
= 5.0 Vdc, I
D
= 15 Adc)
R
DS(on)
− 38 46
mW
Static Drain−to−Source On−Voltage (Note 1)
(V
GS
= 5.0 Vdc, I
D
= 30 Adc)
(V
GS
= 5.0 Vdc, I
D
= 15 Adc, T
J
= 150°C)
V
DS(on)
−
−
1.3
1.06
1.7
−
Vdc
Forward Transconductance (Note 1) (V
DS
= 7.0 Vdc, I
D
= 15 Adc) g
FS
− 21 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 810 1150 pF
Output Capacitance C
oss
− 260 370
Transfer Capacitance C
rss
− 80 115
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 30 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1 W) (Note 1)
t
d(on)
− 10 20 ns
Rise Time t
r
− 200 400
Turn−Off Delay Time t
d(off)
− 15.6 30
Fall Time t
f
− 62 120
Gate Charge
(V
DS
= 48 Vdc, I
D
= 30 Adc,
V
GS
= 5.0 Vdc) (Note 1)
Q
T
− 16 32 nC
Q
1
− 3.9 −
Q
2
− 10 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 30 Adc, V
GS
= 0 Vdc) (Note 1)
(I
S
= 30 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
1.01
1.03
1.2
−
Vdc
Reverse Recovery Time
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 1)
t
rr
− 50 −
ns
t
a
− 32 −
t
b
− 17 −
Reverse Recovery Stored Charge Q
RR
− 0.082 −
mC
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
NTP30N06L, NTB30N06L
http://onsemi.com
3
0
0.1
403020
0
10 6
0
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
0.06
0.02
60
30
20
10
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS) I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
2
1.8
1.4
1.6
1.2
1
0.6
10
1000
10000
0321
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0
0.1
0.06
3020
0
10 60
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
60
−50 50250−25 75 125100
1.5 3.5 6.
5
2.5
030402010 50 60
40
30
20
10
0
6
175150
0.8
4 5 4.5
6 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 5 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
I
D
= 15 A
V
GS
= 5 V
V
GS
= 10 V
5.5 V
5 V
8 V
5.5
0.04
0.02
100
4.5 V
4 V
3.5 V
3 V
40
50 50
40 50
0.08
50
0.04
0.08
P1-P3P4-P6P7-P8

NTP30N06LG

Mfr. #:
Buy NTP30N06LG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 60V 30A LL
Lifecycle:
New from this manufacturer.
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