NSVF6003SB6T1G Datasheet NSVF6003SB6T1G | P1-P3

May 2017 - Rev. 0 NSVF6003SB6/D

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NSVF6003SB6

RF Transistor

12 V, 150 mA, f

T

= 7 GHz, NPN Single

This RF transistor is designed for low noise amplifier applications. CPH

package is suitable for use under high temperature environment because it

has superior heat radiation characteristics. This RF transistor is AEC-Q101

qualified and PPAP capable for automotive applications.

Features

 High Gain (f

T

= 7 GHz typ)

 High Current (I

C

= 150 mA)

 Miniature and Thin 6 pin Package

 Large Collector Dissipation (800 mW)

 AEC-Q101 qualified and PPAP capable

 Pb-Free, Halogen Free and RoHS compliance

Typical Applications

 Low Noise Amplifier for FM Radio

 Low Noise Amplifier for TV



SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25C

(Note 1)

Parameter Symbol Value Unit

Collector to Base Voltage V

CBO

20 V

Collector to Emitter Voltage V

CEO

12 V

Emitter to Base Voltage V

EBO

2 V

Collector Current I

C

150 mA

Collector Dissipation (Note 2) P

C

800 mW

Operating Junction and

Storage Temperature

Tj, Tstg 55 to +150 C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

Note 2 : Surface mounted on ceramic substrate (250 mm

2



0.8 mm).

ORDERING INFORMATION

See detailed ordering and shipping

information on page 6 of this data sheet.

ELECTRICAL CONNECTION

NPN

MARKING

12 V, 150 mA

f

T

= 7 GHz typ.

RF Transisto

r

GC

LOT No.

CPH6

3

2

1

4

5

6

3

4

1, 2, 5, 6

1 : Collector

2 : Collector

3 : Base

4 : Emitter

5 : Collector

6 : Collector

NSVF6003SB6

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2

ELECTRICAL CHARACTERISTICS at Ta  25C

(Note 3)

Parameter Symbol Conditions

Value

Unit

min typ max

Collector Cutoff Current I

CBO

V

CB

= 10 V, I

E

= 0 A 1.0 A

Emitter Cutoff Current I

EBO

V

EB

= 1 V, I

C

= 0 A 10 A

DC Current Gain h

FE

V

CE

= 5 V, I

C

= 50 mA

100 180

Gain-Bandwidth Product f

T

7 GHz

Output Capacitance Cob

V

CB

= 10 V, f = 1 MHz

1.3 2.0 pF

Reverse Transfer Capacitance Cre 0.9 pF

Forward Transfer Gain | S21e |

2

V

CE

= 5 V, I

C

= 50 mA, f = 1 GHz 9.0 dB

Noise Figure NF V

CE

= 5 V, I

C

= 5 0mA, f = 1 GHz 1.8 3.0 dB

Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Note 4 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

NSVF6003SB6

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3

h

FE

--

I

C

Collector Current, I

C

-- mA

DC Current Gain, h

FE

f

T

-- I

C

Collector Current, I

C

-- mA

Gain-Bandwidth Product, f

T

-- GHz

Cob -- V

CB

Collector-to-Base Voltage, V

CB

--

V

Output Capacitance, Cob -- pF

1.0

10

7

2

3

5

1.0

23 57

10

23 2357

100

V

CE

=5V

5

7

5

7

2

3

1.0

1.00.1

23 57 23 57 23 557

10

f=1MHz

Collector-to-Emitter Voltage, V

CE

-- V

I

C

-- V

CE

Collector Current, I

C

-- mA

5

7

100

2

3

1.0

23 57 23 57 23

10 100

V

CE

=5V

160

140

120

100

80

60

40

20

0

024 8106

I

B

=0A

100A

200A

300A

400

A

500A

600A

700A

800A

900A

1000



A

Collector Dissipation, P

C

-- mW

P

C

-- Ta

S21e

2

-- I

C

Collector Current, I

C

-- mA

Ambient Temperature, Ta --

C

Forward Transfer Gain, S21e

2

-- dB

Collector Current, I

C

-- mA

Noise Figure, NF -- dB

NF

-- I

C

0 20 40 60 80 100 120 140 160

0

100

200

300

400

500

600

700

800

900

0

2

4

6

8

12

10

1.0

23 57 23 2357

10 100

0

2

4

6

8

1.0

23 57 23 2357

10 100

V

CE

=5V

f=1GHz

V

CE

=5V

f=1GHz

Surface mounted on ceramic substrate

(250 mm

2

× 0.8 mm)

Collector-to-Base Voltage, V

CB

--

V

Reverse Transfer Capacitance, Cre -- pF

Cre

-- V

CB

5

7

5

7

2

3

1.0

1.00.1

23 57 23 57 23 557

10

f=1MHz

NSVF6003SB6T1G

NSVF6003SB6T1G

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