IMZ1AT108

EMZ1 / UMZ1N / IMZ1A
Transistors
General purpose transistor
(dual transistors)
EMZ1 / UMZ1N / IMZ1A
z
zz
z
Features
1) Both a 2SA1037AK chip and 2SC241ZK chip in a
EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
zz
zStructure
NPN / PNP epitaxial planar silicon transistor
z
zz
zEquivalent circuit
EMZ1 / UMZ1N IMZ1A
(3) (2) (1)
(4) (6)(5)
Tr
2
Tr1
(3) (2) (1)
(4) (6)(5)
Tr
2
Tr1
z
zz
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Limits
Tr
1 Tr2
Unit
V
CBO
60 V
50
V
V
V
CEO
V
EBO
7
I
C
mA150
60
50
6
150
Tj 150 ˚C
Tstg 55∼+150 ˚C
P
C
EMZ1, UMZ1N 150 (TOTAL)
mW
IMZ1A 300 (TOTAL)
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
z
zz
z
External dimensions
(Units : mm)
ROHM : EMT6
EMZ1
ROHM : UMT6
EIAJ : SC-88
UMZ1N
Abbreviated symbol : Z1
Abbreviated symbol : Z1
Abbreviated symbol : Z1
ROHM : SMT6
EIAJ : SC-74
IMZ1A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0to0.1
(
6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
(
1
)
0.65
(
4
)
(
3
)
(
2
)
(
5
)
(
6
)
(
5
)
(
4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
(
3
)
2.8
1.6
1.9
2.9
0.95
(
2
)
0.95
(
1
)
0.22
1.2
1.6
(
1
)
(
2
)(
5
)
(
3
)
(
6
)
(
4
)
0.13
0.5
0.5
0.5
1.0
1.6
EMZ1 / UMZ1N / IMZ1A
Transistors
z
zz
zElectrical characteristics (Ta = 25°C)
Tr1
(NPN)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
60
50
7
120
2
0.1
0.1
560
0.4
3.5
VI
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
60V
V
EB
=7
V
V
CE
=
6V, I
C
=
1mA
I
C
/I
B
=
50mA/5mA
V
V
µA
µA
V
PF
Typ. Max. Unit Conditions
f
T
180
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
Tr
2
(PNP)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
60
50
6
120
4
0.1
0.1
560
0.5
5
VI
C
=
50µA
I
C
=
1mA
I
E
=
50µA
V
CB
=
60V
V
EB
=
6
V
V
CE
=
6V, I
C
=
1mA
I
C
/I
B
=
50mA/5mA
V
V
µA
µA
V
PF
Typ. Max. Unit Conditions
f
T
140
V
CE
=
12V, I
E
=
2mA, f
=
100MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
z
zz
z
Packaging specifications
Package
Code TR T148
3000 3000
Taping
Basic ordering
unit (pieces)
UMZ1N
T2R
8000
EMZ1
IMZ1A
Type
z
zz
zElectrical characteristic curves
Tr
1
(NPN)
0
0.1
0.2
0.5
2
20
50
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
5
10
Ta=100˚C
VCE=6V
25˚C
55˚C
COLLECTOR CURRENT : IC
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
0
20
40
60
80
100
0.4 0.8 1.2 1.6 2.00
0.05mA
0.10mA
0.15mA
0.25mA
0.30mA
0.35mA
0.20mA
Ta=25˚C
I
B
=0A
0.40mA
0.50mA
0.45mA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics ( I )
0
0
2
8
10
4 8 12 16
4
6
20
I
B
=0A
Ta=25˚C
3µA
6µA
9µA
12µA
15µA
18µA
21µA
24µA
27µA
30µA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics ( II )
EMZ1 / UMZ1N / IMZ1A
Transistors
0.2
20
10
0.5 1 2 5 10 20 50 100 200
50
100
200
500
V
CE
=5V
3V
1V
Ta=25˚C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
0.2 0.5 1 2 5 10 20 50 100 200
20
10
50
100
200
500
25˚C
55˚C
Ta=100˚C
V
CE
=5V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current ( II )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C
/I
B
=50
20
10
Ta=25
˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100 200
I
C
/I
B
=10
Ta=100˚C
25˚C
55˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
0.2
0.01
0.02
0.05
0.1
0.2
0.5
0.5 1 2 5 10 20 50 100
I
C
/I
B
=50
Ta=100˚C
25˚C
55˚C
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current ( III )
50
0.5 1 2 5 10 20 50 100
100
200
500
Ta=25˚C
V
CE
=6V
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.9 Gain bandwidth product vs.
emitter current
0.2 0.5 1 2 5 10 20 50
1
2
5
10
20
Cib
Cob
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
Fig.10 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta=25˚C
f
=
1MHz
I
E
=0A
I
C
=0A
0.2 0.5 1 2 5 10
10
20
50
100
200
EMITTER CURRENT : I
E
(mA)
Fig.11 Base-collector time constant vs.
emitter current
BASE COLLECTOR TIME CONSTANT : Cc r
bb'
(ps)
Ta=25
˚C
f=32MH
Z
V
CB
=6V

IMZ1AT108

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT NPN/PNP 50V 150MA SOT-457
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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