2007-04-20
BFP196W
1
1
2
3
4
NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
• Power amplifier for DECT and PCN systems
• f
T
= 7.5 GHz, F = 1.3 dB at 900 MHz
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP196W RIs
1 = E 2 = C 3 = E 4 = B - - SOT343
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
12 V
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
20
Emitter-base voltage V
EBO
2
Collector current I
C
150 mA
Base current I
B
15
Total power dissipation
2)
T
S
≤ 69°C
P
tot
700 mW
Junction temperature T
150 °C
Ambient temperature T
-55 ... 150
Storage temperature T
st
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
3)
R
thJS
≤ 115
K/W
1
Pb-containing package may be available upon special request
2
T
S
is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
thJA
please refer to Application Note Thermal Resistance
