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SI8821EDB-T2-E1

P1-P3P4-P6P7-P9
Si8821EDB
www.vishay.com
Vishay Siliconix
S15-0509-Rev. D, 16-Mar-15
4
Document Number: 63268
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
GS
V
GS
= 3 V
0.000
0.100
0.200
0.300
0.400
0 3 6 9 12 15
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 3.7 V
V
GS
= 4.5 V
0
2
4
6
8
10
0 3 6 9 12
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 15 V
V
DS
= 7.5 V
I
D
= 1 A
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25
°
C
T
C
= 125
°
C
T
C
= - 55 °C
0
100
200
300
400
500
600
700
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5, 3.7 V, I
D
= 1 A
V
GS
= 2.5 V, I
D
= 0.5 A
Si8821EDB
www.vishay.com
Vishay Siliconix
S15-0509-Rev. D, 16-Mar-15
5
Document Number: 63268
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.82
0.84
0.86
0.88
0.90
0.92
0.94
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 1 2 3 4 5
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 1 A
0
2
4
6
8
10
12
14
Power (W)
Time (s)
10 10000.10.01 001100.01
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s, 1s
100 ms
100 µs
Limited by R
DS
(
on
)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
DC
Si8821EDB
www.vishay.com
Vishay Siliconix
S15-0509-Rev. D, 16-Mar-15
6
Document Number: 63268
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating* Power Derating
Note
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
A
- Ambient Temperature (°C)
0.0
0.2
0.4
0.6
0.8
25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power Dissipation (W)
P1-P3P4-P6P7-P9

SI8821EDB-T2-E1

Mfr. #:
Buy SI8821EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
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