ICS557-08
2:1 MULTIPLEXER CHIP FOR PCI-EXPRESS GEN1 PCIE MULTIPLEXER
IDT®
2:1 MULTIPLEXER CHIP FOR PCI-EXPRESS GEN1 7
ICS557-08 REV L 112111
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the ICS557-08. These ratings are stress
ratings only. Functional operation of the device at these or any other conditions above those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for
extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended
operating temperature range.
DC Electrical Characteristics
Unless stated otherwise, VDD = 3.3 V ±5%, Ambient Temperature -40 to +85° C
1. Single edge is monotonic when transitioning through region.
2. Inputs with pull-ups/-downs are not included.
Item Rating
Supply Voltage, VDD 7 V
All Inputs and Outputs -0.5 V to VDD+0.5 V
Ambient Operating Temperature -40 to +85° C
Storage Temperature -65 to +150° C
Junction Temperature 125° C
Soldering Temperature 260° C
ESD Protection (Input) 2000 V min. (HBM)
Parameter Symbol Conditions Min. Typ. Max. Units
Supply Voltage V 3.135 3.465 V
Input High Voltage
1
V
IH
OE, SEL, PD 2.0 VDD +0.3 V
Input Low Voltage
1
V
IL
OE, SEL, PD VSS-0.3 0.8 V
Input Leakage Current
2
I
IL
0 < Vin < VDD -5 5 μA
Operating Supply Current I
DD
50Ω, 2 pF 40 mA
I
DDOE
OE =Low 20 mA
I
DDPD
No load, PD =Low 400 μA
Input Capacitance C
IN
Input pin capacitance 7 pF
Output Capacitance C
OUT
Output pin capacitance 6 pF
Pin Inductance L
PIN
5nH
Output Resistance R
OUT
CLK outputs 3.0 kΩ
Pull-up Resistor R
PUP
OE, SEL, PD 110 kΩ
