L5959 Electrical specification
11/19
I
STG
HSD1 short to ground current VHSD1=0V 240 300 400 mA
I
STB
HSD1 short to V
BAT
current VHSD1=VBAT 2 10 mA
I
Q(VBAT)
HSD1 bias current change
I
HSD1
= 0 to 100 mA;
Measure change in VBAT
current
0.15 10 mA
TS
EN
HSD1 thermal shutdown
I
HSD1
= 500 µA; Increase Ta
until HSD1 disabled
150 190 °C
t
don
Turn-on delay; I
HSD1
= 10mA 10 50 110 µs
t
doff
Turn-off delay, I
HSD1
= 100 mA 70 110 µs
t
r
Rise time
10% to 90%,
I
HSD1
= 10mA
35 75 µs
HIGH SIDE DRIVER2
VdropSW Drop voltage HDS2
Idc = 300mA 0.2 0.6 V
Idc =450mA, t=5S 0.3 1.2 V
I
STG
HSD2 short to ground current VHSD2=0V 0.55 0.75 1 A
I
STB
HSD2 short to V
BAT
current VHSD2=VBAT 3.5 10 mA
I
Q(VBAT)
HSD2 bias current change
I
HSD2
= 0 to 300 mA;
Measure change in VBAT
current
0.15 10 mA
TS
EN
HSD2 thermal shutdown
IHSD2 = 500 µA; Increase Ta
until HSD2 disabled
150 190 °C
t
don
Turn-on delay; I
HSD2
= 10mA 10 45 110 µs
t
doff
Turn-off delay, I
HSD2
= 300 mA 70 110 µs
t
r
Rise time
10% to 90%,
I
HSD2
= 10mA
30 75 µs
RST (open collector output)
V
TH
VSTBY reset threshold
Force VSTBY low until RST*
asserted
0.93 *
VSTBY
0.95 *
VSTBY
0.97 *
VSTBY
V
V
HYS
Hysteresis of reset on rising
VSTBY
10 50 200 mV
t
rRST
Rise time
10% to 90%,
R
RST
= 47 k,
C
RST
= 50 pF
20 30 µs
t
fRST
Fall time
90% to 10%,R
RST
= 47 k,
C
RST
= 50 pF
300 1000 ns
V
IH
_RSTDLY
RSTDLY input voltage threshold Verify RST is de asserted 2.5 2.75 3.5 V
I
SRC
RSTDLY current RSTDLY = 0 VDC 6 8.5 12 µA
Table 5. Electrical characteristics (continued)
(V
S
= 14.4V; T
amb
= 25°C; unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit