OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTTFS4937NTAG

P1-P3P4-P6P7-P7
NTTFS4937N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
10 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
53210
0
20
40
60
100
4.03.53.02.01.51.0
0
10
20
30
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
(V) I
D
, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
30252015105
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
80
V
GS
= 4.0 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
T
J
= 25°C
V
DS
≥ 10 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
V
GS
= 0 V
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
2.5
40
50
60
4.5 V
0.000
0.010
0.020
0.030
0.040
0.050
0.060
2345678910
I
D
= 20 A
T
J
= 25°C
0.0030
0.0035
0.0040
0.0045
0.0050
0.0055
0.0060
0.0065
0.0070
20 30 40 50 60 70 80 90 100110 120130140
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
−50 −25 0 25 50 75 100 125 150
I
D
= 20 A
V
GS
= 10 V
10
30
50
90
70
43.52.51.50.5 4.5
70
80
90
10 150160
NTTFS4937N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
2520151050
0
200
1200
1600
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.7 1.00.60.50.4
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
150125100755025
0
10
40
60
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 20 A
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
I
D
= 37 A
2000
2800
20
30
50
70
400
600
800
1000
1400
1800
2200
2400
2600
10 ms
0
1
2
3
4
5
6
7
8
9
10
11
0 2 4 6 8 101214161820222426283032
Qgs
Qgd
0.01
0.1
1
10
100
1000
0.01 1 10 100
QT
30
0.1
NTTFS4937N
http://onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
P1-P3P4-P6P7-P7

NTTFS4937NTAG

Mfr. #:
Buy NTTFS4937NTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 75A 4.5 mOhm Single N-Chan u8FL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet