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NTMD5838NLR2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 1
1 Publication Order Number:
NTMD5838NL/D
NTMD5838NL
Power MOSFET
40 V, 8.9 A, 20 mW, Dual N−Channel SO−8
Features
• Low R
DS(on)
• Low Capacitance
• Optimized Gate Charge
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
40 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
7.4
A
T
A
= 70°C 5.9
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C
P
D
2.1
W
T
A
= 70°C 1.3
Continuous Drain
Current R
q
JA
(Note 1)
t ≤10 s
T
A
= 25°C
I
D
8.9
A
T
A
= 70°C 7.1
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C
P
D
3.0
W
T
A
= 70°C 1.9
Pulsed Drain
Current
t
p
= 10 ms
I
DM
35 A
Operating Junction and Storage
Temperature
T
J
, T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
7.0 A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
EAS 20 mJ
IAS 21 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient Steady State
(Notes 1 & 3)
R
q
JA
58
°C/W
Junction−to−Ambient − t ≤10 s (Note 1)
R
q
JA
40
Junction−to−Ambient Steady State (Note 2)
R
q
JA
106
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm
2
) pad size.
3. Both channels receive equivalent power dissipation
1 W applied on each channel: T
J
= 2 W * 58°C/W + 25°C = 141°C
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
40 V
20 mW @ 10 V
8.9 A
36.5 mW @ 4.5 V
G
S
N−CHANNEL MOSFET
D
Device Package Shipping
†
ORDERING INFORMATION
NTMD5838NLR2G SO−8
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
SO−8
CASE 751
STYLE 11
MARKING DIAGRAM/
PIN ASSIGNMENT
(Top View)
G
S
D
D5838N
AYWW
G
1
8
S1 G1 S2 G2
D1 D1 D2 D2
NTMD5838NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
40 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
32
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25 °C 1.0
mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.8 3.0 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
6.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 7 A 16.2 20
mW
V
GS
= 4.5 V, I
D
= 7 A 25.0 36.5
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 7 A 4.0 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 20 V
785
pF
Output Capacitance C
OSS
123
Reverse Transfer Capacitance C
RSS
90
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 20 V; I
D
= 7 A 17
nC
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 7 A
8.6 11
Threshold Gate Charge Q
G(TH)
0.8
Gate−to−Source Charge Q
GS
2.8
Gate−to−Drain Charge Q
GD
4.0
Plateau Voltage V
GP
3.2 V
Gate Resistance R
G
1.8
W
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 7 A, R
G
= 2.5 W
11
ns
Rise Time t
r
23
Turn−Off Delay Time t
d(OFF)
17
Fall Time t
f
4.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 7 A
T
J
= 25°C 0.84 1.2
V
T
J
= 125°C 0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 7 A
17
ns
Charge Time t
a
11
Discharge Time t
b
6.0
Reverse Recovery Charge Q
RR
10 nC
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NTMD5838NL
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
0
10
20
30
40
50
012345
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D,
DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
T
J
= 25°C
4.4 V
3 V
3.6 V
4 V
5.5 V
10 V
7.5 V
0
10
20
30
40
50
2345
T
J
= 125°C
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D,
DRAIN CURRENT (A)
T
J
= −55°C
T
J
= 25°C
V
DS
≥ 5 V
0.01
0.02
0.03
0.04
0.05
0.06
2345678910
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
I
D
= 7 A
0.005
0.015
0.025
0.035
2 6 10 14 18
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 10 V
V
GS
= 4.5 V
I
D,
DRAIN CURRENT (A)
0.6
0.8
1
1.2
1.4
1.6
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
= 4.5 V
I
D
= 7 A
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
100
1000
10000
100000
5152535
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 125°C
T
J
= 150°C
P1-P3P4-P6

NTMD5838NLR2G

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Manufacturer:
ON Semiconductor
Description:
MOSFET NFETDPAK40V100A3.7M OHM
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